| Characteristics of an amorphous carbon layer as a diffusion barrier for an advanced copper interconnect BS An, Y Kwon, JS Oh, C Lee, S Choi, H Kim, M Lee, S Pae, CW Yang ACS applied materials & interfaces 12 (2), 3104-3113, 2019 | 24 | 2019 |
| Quantum computing hardware for hep algorithms and sensing MS Alam, S Belomestnykh, N Bornman, G Cancelo, YC Chao, ... arXiv preprint arXiv:2204.08605, 2022 | 18 | 2022 |
| Precisely controlled synthesis of hybrid intermetallic–metal nanoparticles for nitrate electroreduction J Yu, AF Kolln, D Jing, J Oh, H Liu, Z Qi, L Zhou, W Li, W Huang ACS Applied Materials & Interfaces 13 (44), 52073-52081, 2021 | 14 | 2021 |
| Evaluation of ion/electron beam induced deposition for electrical connection using a modern focused ion beam system BS An, Y Kwon, JS Oh, YJ Shin, J Ju, CW Yang Applied Microscopy 49 (1), 1-5, 2019 | 10 | 2019 |
| Amorphous TaxMnyOz Layer as a Diffusion Barrier for Advanced Copper Interconnects BS An, Y Kwon, JS Oh, M Lee, S Pae, CW Yang Scientific Reports 9 (1), 20132, 2019 | 9 | 2019 |
| Direct observation of texture memory in hydrogenation–disproportionation–desorption–recombination processed Nd-Fe-B magnets using electron backscatter diffraction TH Kim, JS Oh, HR Cha, JG Lee, HW Kwon, CW Yang Scripta Materialia 115, 6-9, 2016 | 8 | 2016 |
| Quantification of crystallinity using zero‐loss filtered electron diffraction BS An, Y Kwon, HW Cha, MC Kang, JS Oh, CW Yang Microscopy Research and Technique 82 (1), 39-46, 2019 | 7 | 2019 |
| Atomic-Level Structure of Mesoporous Hexagonal Boron Nitride Determined by High-Resolution Solid-State Multinuclear Magnetic Resonance Spectroscopy and Density Functional … RW Dorn, PM Heintz, I Hung, K Chen, JS Oh, TH Kim, L Zhou, Z Gan, ... Chemistry of Materials 34 (4), 1649-1665, 2022 | 6 | 2022 |
| Low angle boundary migration of shot‐peened pure nickel investigated by electron channeling contrast imaging and electron backscatter diffraction JS Oh, HW Cha, TH Kim, K Shin, CW Yang Microscopy Research and Technique 82 (6), 849-855, 2019 | 5 | 2019 |
| Understanding mechanism of performance improvement in nitrogen-doped niobium superconducting radio frequency cavity X Fang, JS Oh, M Kramer, A Romanenko, A Grassellino, J Zasadzinski, ... Materials Research Letters 11 (2), 108-116, 2023 | 4 | 2023 |
| Phase change in GeTe/Sb2Te3 superlattices: Formation of the vacancy-ordered metastable cubic structure via Ge migration CW Lee, JS Oh, SH Park, HW Lim, DS Kim, KJ Cho, CW Yang, YK Kwon, ... Applied Surface Science 602, 154274, 2022 | 4 | 2022 |
| Interfacial reactions in Ni/6H-SiC at low temperatures S Lim, JS Oh, Y Kwon, BS An, JH Bae, TH Kim, MH Park, HS Kim, ... Journal of Nanoscience and Nanotechnology 16 (10), 10853-10857, 2016 | 4 | 2016 |
| In-situ transmission electron microscopy investigation on surface oxides thermal stability of niobium JS Oh, X Fang, TH Kim, M Lynn, M Kramer, M Zarea, JA Sauls, ... Applied Surface Science 627, 157297, 2023 | 3* | 2023 |
| Improvements in Thermal Stability of Sb2Te3 by Modulation of Microstructure via Carbon Incorporation S Hwang, JS Oh, TS Jung, D Kim, H Lim, C Lee, CW Yang, JH Kim, ... ACS Applied Electronic Materials 3 (8), 3472-3481, 2021 | 3 | 2021 |
| Visualizing heterogeneous dipole fields by terahertz light coupling in individual nano-junctions RHJ Kim, JM Park, S Haeuser, C Huang, D Cheng, T Koschny, J Oh, ... Communications Physics 6 (1), 147, 2023 | 2* | 2023 |
| Conversion between metavalent and covalent bond in metastable superlattices composed of 2D and 3D sublayers D Kim, Y Kim, JS Oh, C Lee, H Lim, CW Yang, E Sim, MH Cho ACS nano 16 (12), 20758-20769, 2022 | 2 | 2022 |
| Optimal Conditions for Defect Analysis Using Electron Channeling Contrast Imaging JS Oh, CW Yang Applied Microscopy 46 (3), 164-166, 2016 | 2 | 2016 |
| Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation M Bal, AA Murthy, S Zhu, F Crisa, X You, Z Huang, T Roy, J Lee, ... arXiv preprint arXiv:2304.13257, 2023 | 1 | 2023 |
| Phase Change via Intermediary Metastable Local Structure of Ge Atoms in Ge2Sb2Te5 Nanowires during Electrical Switching M Ahn, JS Oh, D Park, H Jung, S Park, K Jeong, D Kim, NE Sung, KS Lee, ... ACS Applied Electronic Materials 2 (8), 2418-2428, 2020 | 1 | 2020 |
| Direct Observation of Ferroelectric Domain Switching of BaTiO3 Using In-Situ Transmission Electron Microscopy KJ Jo, BS An, TH Kim, HW Cha, JS Oh, JH Lee, MY Kim, CW Yang Science of Advanced Materials 8 (12), 2281-2285, 2016 | 1 | 2016 |
