| MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap HS Lee, SW Min, YG Chang, MK Park, T Nam, H Kim, JH Kim, S Ryu, S Im Nano letters 12 (7), 3695-3700, 2012 | 1143 | 2012 |
| Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance SW Min, HS Lee, HJ Choi, MK Park, T Nam, H Kim, S Ryu, S Im Nanoscale, 2013 | 79 | 2013 |
| Graphene as an atomically thin barrier to Cu diffusion into Si J Hong, S Lee, S Lee, H Han, C Mahata, HW Yeon, B Koo, SI Kim, T Nam, ... Nanoscale 6 (13), 7503-7511, 2014 | 74 | 2014 |
| Low-temperature Atomic Layer Deposition of TiO2, Al2O3, and ZnO Thin films T Nam, JM Kim, MK Kim, WH Kim, H Kim Journal of the Korean Physical Society 59 (2), 452~457, 2011 | 65 | 2011 |
| Atomic layer deposition ZnO: N flexible thin film transistors and the effects of bending on device properties JM Kim, T Nam, SJ Lim, YG Seol, NE Lee, D Kim, H Kim Applied Physics Letters 98 (14), 142113, 2011 | 49 | 2011 |
| Direct imprinting of MoS 2 flakes on a patterned gate for nanosheet transistors K Choi, YT Lee, SW Min, HS Lee, T Nam, H Kim, S Im Journal of Materials Chemistry C 1 (47), 7803-7807, 2013 | 47 | 2013 |
| Growth characteristics and properties of Ga-doped ZnO (GZO) thin films grown by thermal and plasma-enhanced atomic layer deposition T Nam, CW Lee, HJ Kim, H Kim Applied surface science 295, 260-265, 2014 | 46 | 2014 |
| A composite layer of atomic-layer-deposited Al2O3 and graphene for flexible moisture barrier T Nam, YJ Park, H Lee, IK Oh, JH Ahn, SM Cho, H Kim Carbon 116, 553-561, 2017 | 26 | 2017 |
| The effects of ultraviolet exposure on the device characteristics of atomic layer deposited-ZnO: N thin film transistors JM Kim, SJ Lim, T Nam, D Kim, H Kim Journal of The Electrochemical Society 158 (5), J150, 2011 | 25 | 2011 |
| Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition D Kim, T Nam, J Park, J Gatineau, H Kim Thin Solid Films 587, 83-87, 2015 | 15 | 2015 |
| Molecular oxidation of surface–CH3 during atomic layer deposition of Al2O3 with H2O, H2O2, and O3: a theoretical study S Seo, T Nam, H Kim, B Shong Applied Surface Science 457, 376-380, 2018 | 12 | 2018 |
| Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor T Nam, H Lee, T Choi, S Seo, CM Yoon, Y Choi, H Jeong, HK Lingam, ... Applied Surface Science 485, 381-390, 2019 | 8 | 2019 |
| Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating SJ Yoon, K Pak, T Nam, A Yoon, H Kim, SG Im, BJ Cho ACS nano 11 (8), 7841-7847, 2017 | 7 | 2017 |
| Cobalt titanium nitride amorphous metal alloys by atomic layer deposition T Nam, CW Lee, T Cheon, WJ Lee, SH Kim, SH Kwon, H Kim Journal of Alloys and Compounds 737, 684-692, 2018 | 5 | 2018 |
| Effects of TaN diffusion barrier on Cu-Gate ZnO: N thin-film transistors WJ Woo, T Nam, H Jung, IK Oh, JG Song, W Maeng, H Kim IEEE Electron Device Letters 37 (5), 599-602, 2016 | 3 | 2016 |
| High‐performance alternating current electroluminescent layers solution blended with mechanically and electrically robust nonradiating polymers SS Jo, SH Cho, HJ Kim, T Nam, I Hwang, SH Jung, RH Kim, DB Velusamy, ... Journal of Polymer Science Part B: Polymer Physics 53 (23), 1629-1640, 2015 | 3 | 2015 |
| Atomic layer deposition for nonconventional nanomaterials and their applications T Nam, H Kim Journal of Materials Research 35 (7), 656-680, 2020 | 2 | 2020 |
| Hydrogen barrier properties of atomic layer deposited Al 2 O 3 with different oxidants for Ingazno thin film transistor Y Lee, T Nam, S Seo, CH Lee, JY Yang, DW Choi, C Yoo, H Kim, H Kim Proc. Meeting Abstr., 2019 | 2 | 2019 |
| Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor Y Lee, CH Lee, T Nam, S Lee, IK Oh, JY Yang, DW Choi, C Yoo, H Kim, ... Journal of Materials Science 54 (16), 11145-11156, 2019 | 2 | 2019 |
| High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation WJ Woo, T Nam, IK Oh, W Maeng, H Kim Metals and Materials International 24 (3), 652-656, 2018 | 2 | 2018 |
Hyungjun KimSchool of Electrical abd Electronic Engineering, Yonsei Universityyonsei.ac.kr의 이메일 확인됨
