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Dr. Rajshekhar Bar
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Simple growth of faceted Au–ZnO hetero-nanostructures on silicon substrates (nanowires and triangular nanoflakes): A shape and defect driven enhanced photocatalytic performance …
A Ghosh, P Guha, AK Samantara, BK Jena, R Bar, S Ray, PV Satyam
ACS Applied Materials & Interfaces 7 (18), 9486-9496, 2015
452015
Tuning the work function of randomly oriented ZnO nanostructures by capping with faceted Au nanostructure and oxygen defects: enhanced field emission experiments and DFT studies
A Ghosh, P Guha, R Thapa, S Selvaraj, M Kumar, B Rakshit, T Dash, ...
Nanotechnology 27 (12), 125701, 2016
422016
Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices
R Bar, R Aluguri, S Manna, A Ghosh, PV Satyam, SK Ray
Appl. Phys. Lett. 107 (9), 093102, 2015
312015
Growth of Au capped GeO2 nanowires for visible-light photodetection
A Ghosh, P Guha, S Mukharjee, R Bar, SK Ray, PV Satyam
Applied Physics Letters 109, 123105, 2016
242016
Size-tunable electroluminescence characteristics of quantum confined Si nanocrystals embedded in Si-rich oxide matrix
A Sarkar, R Bar, S Singh, RK Chowdhury, S Bhattacharya, AK Das, ...
Applied Physics Letters 116 (23), 2020
142020
Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions
S Manna, R Aluguri, R Bar, S Das, N Prtljaga, L Pavesi, SK Ray
Nanotechnology 26 (4), 045202, 2015
142015
Size dependent photoresponse characteristics of crystalline Ge quantum dots based photodetectors
R Bar, S Manna, SK Ray
Optical Materials 60, 501-505, 2016
122016
Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy
RK Singha, S Manna, R Bar, S Das, SK Ray
Applied Surface Science 407, 418-426, 2017
82017
Emission characteristics of self-assembled strained Ge1− xSnx islands for sources in the optical communication region
R Bar, AK Katiyar, R Aluguri, SK Ray
Nanotechnology 28 (29), 295201, 2017
72017
Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films
AK Katiyar, A Grimm, R Bar, S Jan, T Wietler, HJ Osten, SK Ray
Nanotechnology 27, 435204, 2016
62016
Photoluminescence Characteristics Of Ge1-xSnx Nanostructures Grown On Si Substrates Using Molecular Beam Epitaxy
R Aluguri, AK Katiyar, R Bar, SK Ray
International Conference on Fibre Optics and Photonics, M4A. 78, 2014
12014
Optical Emission Characteristics of Compressively Strained Ge Films
AK Katiyar, A Grimm, A Rakesh, R Bar, T Wietler, HJ Osten, SK Ray
International Conference on Fibre Optics and Photonics, S5A. 65, 2014
2014
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Articles 1–12