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Sun-Woo Kim
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Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack
GS Kim, SW Kim, SH Kim, J Park, Y Seo, BJ Cho, C Shin, JH Shim, HY Yu
ACS applied materials & interfaces 8 (51), 35419-35425, 2016
432016
The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction
SW Kim, SH Kim, GS Kim, C Choi, R Choi, HY Yu
ACS applied materials & interfaces 8 (51), 35614-35620, 2016
272016
Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF 6 Plasma Treatment
SH Kim, GS Kim, SW Kim, JK Kim, C Choi, JH Park, R Choi, HY Yu
IEEE Electron Device Letters 37 (4), 373-376, 2016
152016
Ar Plasma Treatment for III–V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction
SH Kim, SW Kim, GS Kim, J Kim, JH Park, HY Yu
Journal of Nanoscience and Nanotechnology 16 (10), 10389-10392, 2016
52016
Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET
J Ahn, JK Kim, SW Kim, GS Kim, C Shin, JK Kim, BJ Cho, HY Yu
IEEE Electron Device Letters 37 (6), 705-708, 2016
32016
Source/Drain Contact Resistance Reduction through Al-Doped ZnO Interlayer to Metal-Interlayer-GaAs Contact Structure
SH Kim, GS Kim, SW Kim, HY Yu
ECS Transactions 72 (4), 321-323, 2016
12016
Formation of Low-Resistivity Metal/Germanium Contact with Ultra-Thin Interlayer and Plasma Oxidation for n-Channel Germanium FET
GS Kim, SH Kim, J Park, SW Kim, HY Yu
Meeting Abstracts, 1177-1177, 2016
12016
2-Dimensional Analysis of Plasma Ashing Damage Induced by Oxygen-Based Plasmas Along Nanopores in SiOCH Film for a Nanoscale Back-End of Line Process
GS Kim, SW Kim, HJ Zang, M Ha, SS Park, CH Kim, HY Yu
Journal of Nanoscience and Nanotechnology 16 (11), 11766-11770, 2016
2016
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