Follow
Sungjun Kim
Sungjun Kim
Division of Electronics and Electrical Engineering, Dongguk University
Verified email at dongguk.edu
Title
Cited by
Cited by
Year
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
2232017
Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications
C Mahata, H Algadi, J Lee, S Kim, T Lee
Measurement 151, 107095, 2020
1042020
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
982019
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 2015
972015
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
902018
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
S Kim, BG Park
Applied Physics Letters 108 (21), 2016
692016
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application
JH Ryu, C Mahata, S Kim
Journal of Alloys and Compounds 850, 156675, 2021
662021
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
M Ismail, H Abbas, C Choi, S Kim
Applied Surface Science 529, 147107, 2020
642020
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ...
Journal of Alloys and Compounds 826, 154434, 2020
632020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device
H Ryu, S Kim
Nanomaterials 10 (11), 2159, 2020
602020
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
M Ismail, U Chand, C Mahata, J Nebhen, S Kim
Journal of Materials Science & Technology 96, 94-102, 2022
592022
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
MK Rahmani, M Ismail, C Mahata, S Kim
Results in Physics 18, 103325, 2020
592020
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
M Ismail, C Mahata, S Kim
Journal of Alloys and Compounds 892, 162141, 2022
572022
Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices
S Kim, YF Chang, BG Park
RSC Advances 7, 17882, 2017
532017
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
C Mahata, M Kang, S Kim
Nanomaterials 10 (10), 2069, 2020
522020
Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering
J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ...
ACS applied materials & interfaces 12 (30), 33908-33916, 2020
512020
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
M Ismail, H Abbas, C Choi, S Kim
Journal of Alloys and Compounds 835, 155256, 2020
502020
Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing
JH Ryu, S Kim
Chaos, Solitons & Fractals 140, 110236, 2020
472020
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ...
Applied Surface Science 529, 147167, 2020
472020
Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching
M Ismail, MK Rahmani, SA Khan, J Choi, F Hussain, Z Batool, AM Rana, ...
Applied Surface Science 498, 143833, 2019
472019
The system can't perform the operation now. Try again later.
Articles 1–20