Kyung-Chang Ryoo
Kyung-Chang Ryoo
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Full integration and reliability evaluation of phase-change RAM based on 0.24/spl mu/m-CMOS technologies
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
Highly reliable 50nm contact cell technology for 256Mb PRAM
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
Highly manufacturable high density phase change memory of 64Mb and beyond
SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Three-dimensional NAND flash architecture design based on single-crystalline stacked array
Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ...
IEEE Transactions on Electron Devices 59 (1), 35-45, 2011
Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb
SL Cho, JH Yi, YH Ha, BJ Kuh, CM Lee, JH Park, SD Nam, H Horii, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 96-97, 2005
Full integration of highly manufacturable 512Mb PRAM based on 90nm technology
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
Semiconductor devices and methods of driving the same
JH Oh, KC Ryoo, B Park, K Oh, IG Baek
US Patent 8,472,237, 2013
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ...
US Patent 7,482,616, 2009
Phase changeable memory device and method of formation thereof
BO Cho, S Joo, KC Ryoo, KR Byun
US Patent 7,419,881, 2008
Writing current reduction for high-density phase-change RAM
YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ...
IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003
Full integration and cell characteristics for 64Mb nonvolatile PRAM
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology
YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
Phase change memory devices having dual lower electrodes
YJ Song, KC Ryoo, D Lim
US Patent 7,696,508, 2010
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
IEDM Tech. Dig.
CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
IEDM Tech. Dig 2, 2006
Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors
YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, HJ Kim, ...
Non-Volatile Semiconductor Memory Workshop, Digest of Technical Papers, US …, 2003
Phase-changeable memory devices having reduced susceptibility to thermal interference
KC Ryoo, KO Jong-Woo, YJ Song
US Patent 7,977,662, 2011
Highly reliable ring-type contact for high-density phase change memory
CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
Japanese journal of applied physics 45 (4S), 3233, 2006
Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
S Kim, S Cho, KC Ryoo, BG Park
Journal of Vacuum Science & Technology B 33 (6), 2015
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