Cammy R Abernathy
Cammy R Abernathy
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Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
11492003
Advances in wide bandgap materials for semiconductor spintronics
SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ...
Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003
5342003
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
4402002
Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN
ME Overberg, CR Abernathy, SJ Pearton, NA Theodoropoulou, ...
Applied Physics Letters 79 (9), 1312-1314, 2001
3712001
Magnetic and structural properties of Mn-implanted GaN
N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 78 (22), 3475-3477, 2001
3442001
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
3082005
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
2731998
Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn) P: C
N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Physical review letters 89 (10), 107203, 2002
2712002
Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
2681989
1.54‐μm photoluminescence from Er‐implanted GaN and AlN
RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ...
Applied Physics Letters 65 (8), 992-994, 1994
2631994
Wet chemical etching of AlN
JR Mileham, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, ...
Applied physics letters 67 (8), 1119-1121, 1995
2221995
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
2102002
Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
SJ Pearton, CR Abernathy, F Ren
Applied physics letters 64 (17), 2294-2296, 1994
2101994
Wide bandgap GaN-based semiconductors for spintronics
SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
1762004
Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
SJ Pearton, CR Abernathy, F Ren, JR Lothian, PW Wisk, A Katz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993
175*1993
High-density plasma etching of compound semiconductors
RJ Shul, GB McClellan, RD Briggs, DJ Rieger, SJ Pearton, CR Abernathy, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997
1701997
CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
CR Abernathy, JD MacKenzie, SJ Pearton, WS Hobson
Applied physics letters 66 (15), 1969-1971, 1995
168*1995
Gallium nitride processing for electronics, sensors and spintronics
SJ Pearton, CR Abernathy, F Ren
Springer Science & Business Media, 2006
1662006
High temperature electron cyclotron resonance etching of GaN, InN, and AlN
RJ Shul, SP Kilcoyne, M Hagerott Crawford, JE Parmeter, CB Vartuli, ...
Applied physics letters 66 (14), 1761-1763, 1995
1641995
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
1572003
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