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Ayayi Claude Ahyi
Ayayi Claude Ahyi
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Bonding at the Interface and the Effects of Nitrogen and Hydrogen
S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ...
Physical review letters 98 (2), 026101, 2007
2292007
Role of self-trapped holes in the photoconductive gain of ¥â-gallium oxide Schottky diodes
AM Armstrong, MH Crawford, A Jayawardena, A Ahyi, S Dhar
Journal of Applied Physics 119 (10), 2016
1782016
Scaling between channel mobility and interface state density in SiC MOSFETs
J Rozen, AC Ahyi, X Zhu, JR Williams, LC Feldman
IEEE Transactions on Electron Devices 58 (11), 3808-3811, 2011
1542011
Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation
G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ...
IEEE Electron Device Letters 34 (2), 181-183, 2013
1292013
High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer
YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ...
IEEE Electron Device Letters 34 (2), 175-177, 2013
942013
Phosphorous passivation of the SiO2/4H–SiC interface
YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ...
Solid-State Electronics 68, 103-107, 2012
832012
Atomic state and characterization of nitrogen at the SiC/SiO2 interface
Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ...
Journal of Applied Physics 115 (3), 2014
772014
High channel mobility 4H-SiC MOSFETs by antimony counter-doping
A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ...
IEEE Electron Device Letters 35 (9), 894-896, 2014
712014
Analysis of temperature dependent forward characteristics of Ni/¥â-Ga2O3 Schottky diodes
A Jayawardena, AC Ahyi, S Dhar
Semiconductor Science and Technology 31 (11), 115002, 2016
642016
Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
S Dhar, SR Wang, AC Ahyi, T Isaacs-Smith, ST Pantelides, JR Williams, ...
Materials science forum 527, 949-954, 2006
632006
Proton radiation effects in 4H-SiC diodes and MOS capacitors
Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ...
IEEE transactions on nuclear science 51 (6), 3748-3752, 2004
612004
Experimental demonstration of the pseudo-Rayleigh wave
AC Ahyi, P Pernod, O Gatti, V Latard, A Merlen, H Überall
The Journal of the Acoustical Society of America 104 (5), 2727-2732, 1998
571998
Structure and stoichiometry of (0001) 4H–SiC/oxide interface
X Zhu, HD Lee, T Feng, AC Ahyi, D Mastrogiovanni, A Wan, E Garfunkel, ...
Applied Physics Letters 97 (7), 2010
542010
Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors
MJ Marinella, DK Schroder, T Isaacs-Smith, AC Ahyi, JR Williams, ...
Applied Physics Letters 90 (25), 2007
542007
Interface trapping in (2¯ 01) ¥â-Ga2O3 MOS capacitors with deposited dielectrics
A Jayawardena, RP Ramamurthy, AC Ahyi, D Morisette, S Dhar
Applied Physics Letters 112 (19), 2018
522018
Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors
JA Taillon, J Hyuk Yang, CA Ahyi, J Rozen, JR Williams, LC Feldman, ...
Journal of Applied Physics 113 (4), 2013
452013
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
X Zhu, AC Ahyi, M Li, Z Chen, J Rozen, LC Feldman, JR Williams
Solid-state electronics 57 (1), 76-79, 2011
392011
Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array
F Tong, K Kim, D Martinez, R Thapa, A Ahyi, J Williams, DJ Kim, S Lee, ...
Semiconductor Science and Technology 27 (10), 105005, 2012
282012
Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces
A Modic, YK Sharma, Y Xu, G Liu, AC Ahyi, JR Williams, LC Feldman, ...
Journal of electronic materials 43, 857-862, 2014
252014
Chitosan solid electrolyte as electric double layer in multilayer MoS2 transistor for low‐voltage operation
J Jiang, MA Kuroda, AC Ahyi, T Isaacs‐Smith, V Mirkhani, M Park, S Dhar
physica status solidi (a) 212 (10), 2219-2225, 2015
222015
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