| Synaptic suppression triplet‐STDP learning rule realized in second‐order memristors R Yang, HM Huang, QH Hong, XB Yin, ZH Tan, T Shi, YX Zhou, XS Miao, ... Advanced functional materials 28 (5), 1704455, 2018 | 236 | 2018 |
| Memory materials and devices: From concept to application Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou InfoMat 2 (2), 261-290, 2020 | 207 | 2020 |
| A review of resistive switching devices: performance improvement, characterization, and applications T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu Small Structures 2 (4), 2000109, 2021 | 143 | 2021 |
| Nanocasting and direct synthesis strategies for mesoporous carbons as supercapacitor electrodes M Zhang, L He, T Shi, R Zha Chemistry of Materials 30 (21), 7391-7412, 2018 | 106 | 2018 |
| A habituation sensory nervous system with memristors Z Wu, J Lu, T Shi, X Zhao, X Zhang, Y Yang, F Wu, Y Li, Q Liu, M Liu Advanced Materials 32 (46), 2004398, 2020 | 91 | 2020 |
| Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks X Zhang, J Lu, Z Wang, R Wang, J Wei, T Shi, C Dou, Z Wu, J Zhu, ... Science Bulletin 66 (16), 1624-1633, 2021 | 65 | 2021 |
| Defect chemistry of alkaline earth metal (Sr/Ba) titanates T Shi, Y Chen, X Guo Progress in Materials Science 80, 77-132, 2016 | 65 | 2016 |
| Bipolar analog memristors as artificial synapses for neuromorphic computing R Wang, T Shi, X Zhang, W Wang, J Wei, J Lu, X Zhao, Z Wu, R Cao, ... Materials 11 (11), 2102, 2018 | 63 | 2018 |
| Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices T Shi, R Yang, X Guo Solid State Ionics 296, 114-119, 2016 | 59 | 2016 |
| 3D porous hierarchical microspheres of activated carbon from nature through nanotechnology for electrochemical double-layer capacitors L Wei, K Tian, X Zhang, Y Jin, T Shi, X Guo ACS Sustainable Chemistry & Engineering 4 (12), 6463-6472, 2016 | 57 | 2016 |
| A self-rectification and quasi-linear analogue memristor for artificial neural networks W Wang, R Wang, T Shi, J Wei, R Cao, X Zhao, Z Wu, X Zhang, J Lu, H Xu, ... IEEE Electron Device Letters 40 (9), 1407-1410, 2019 | 48 | 2019 |
| Implementing in-situ self-organizing maps with memristor crossbar arrays for data mining and optimization R Wang, T Shi, X Zhang, J Wei, J Lu, J Zhu, Z Wu, Q Liu, M Liu Nature communications 13 (1), 2289, 2022 | 41 | 2022 |
| Pt/WO 3/FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing T Shi, XB Yin, R Yang, X Guo Physical Chemistry Chemical Physics 18 (14), 9338-9343, 2016 | 37 | 2016 |
| Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory F Wu, S Si, P Cao, W Wei, X Zhao, T Shi, X Zhang, J Ma, R Cao, L Liao, ... Advanced Electronic Materials 5 (4), 1800747, 2019 | 31 | 2019 |
| Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory Y Wang, F Huang, Y Hu, R Cao, T Shi, Q Liu, L Bi, M Liu IEEE Electron Device Letters 39 (6), 823-826, 2018 | 29 | 2018 |
| Behavioral Plasticity Emulated with Lithium Lanthanum Titanate‐Based Memristive Devices: Habituation T Shi, JF Wu, Y Liu, R Yang, X Guo Advanced Electronic Materials 3 (9), 1700046, 2017 | 25 | 2017 |
| A 4T2R RRAM bit cell for highly parallel ternary content addressable memory X Wang, L Wang, Y Wang, J An, C Dou, Z Wu, X Zhang, J Liu, C Zhang, ... IEEE Transactions on Electron Devices 68 (10), 4933-4937, 2021 | 24 | 2021 |
| Neat 3D C3N4 monolithic aerogels embedded with carbon aerogels via ring-opening polymerization with high photoreactivity M Zhang, L He, T Shi, R Zha Applied Catalysis B: Environmental 266, 118652, 2020 | 24 | 2020 |
| Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application F Wu, S Si, T Shi, X Zhao, Q Liu, L Liao, H Lv, S Long, M Liu Nanotechnology 29 (5), 054001, 2018 | 19 | 2018 |
| High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications P Chen, X Zhang, Z Wu, Y Wang, J Zhu, Y Hao, G Feng, Y Sun, T Shi, ... IEEE Transactions on Electron Devices 69 (5), 2391-2397, 2022 | 16 | 2022 |
