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Chee Hing Tan
Chee Hing Tan
sheffield.ac.ukÀÇ À̸ÞÀÏ È®ÀÎµÊ - ȨÆäÀÌÁö
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Excess avalanche noise in In0. 52Al0. 48As
YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
1032007
Temperature dependence of avalanche breakdown in InP and InAlAs
LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
932010
Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 2008
832008
Avalanche multiplication in InAlAs
YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
802006
Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ...
Nature Photonics 13 (10), 683-686, 2019
782019
Avalanche noise characteristics in submicron InP diodes
LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
782008
Avalanche noise measurement in thin Si diodes
CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ...
Applied Physics Letters 76 (26), 3926-3928, 2000
772000
Impact ionization in InAs electron avalanche photodiodes
ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
652010
Material considerations for avalanche photodiodes
JPR David, CH Tan
IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008
642008
Extremely low excess noise in InAs electron avalanche photodiodes
ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
632009
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As
JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
622003
Temperature dependence of leakage current in InAs avalanche photodiodes
PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
602011
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
582002
Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes
CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey
IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001
562001
Demonstration of InAsBi photoresponse beyond 3.5 ¥ìm
IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 2014
542014
Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end
KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees
Measurement science and technology 17 (7), 1941, 2006
522006
InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C
Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier
Solar Energy Materials and Solar Cells 179, 334-338, 2018
512018
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
502011
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan
Optics express 24 (21), 24242-24247, 2016
472016
Temperature dependence of AlGaAs soft X-ray detectors
AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David
Nuclear Instruments and Methods in Physics Research Section A: Accelerators ¡¦, 2010
462010
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