| Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers L Chauhan, S Gupta, P Jaiswal, N Bhat, SA Shivashankar, G Hughes Thin Solid Films 589, 264-267, 2015 | 9 | 2015 |
| Influence of oxygen plasma on the growth, structure, morphology, and electro-optical properties of p-Type transparent conducting CuBr thin films RK Vijayaraghavan, AP McCoy, L Chauhan, A Cowley, RJH Morris, ... The Journal of Physical Chemistry C 118 (40), 23226-23232, 2014 | 6 | 2014 |
| High resolution synchrotron radiation based photoemission study of the in situ deposition of molecular sulphur on the atomically clean InGaAs surface L Chauhan, G Hughes Journal of Applied Physics 111 (11), 2012 | 6 | 2012 |
| Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs NS Bennett, K Cherkaoui, CS Wong, É O'Connor, S Monaghan, P Hurley, ... Thin solid films 569, 104-112, 2014 | 5 | 2014 |
| High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission L Chauhan, DR Gajula, D McNeill, G Hughes Applied surface science 317, 696-700, 2014 | 4 | 2014 |
| Thermal stability studies on atomically clean and sulphur passivated InGaAs surfaces L Chauhan, G Hughes physica status solidi (a) 210 (3), 519-522, 2013 | 3 | 2013 |
| High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces L Chauhan, DR Gajula, D Mc Neill, G Hughes Microelectronic Engineering 147, 249-253, 2015 | | 2015 |
| Synchrotron radiation photoemission study of interface formation between MgO and the atomically clean In0.53Ga0.47As surface L Chauhan, G Hughes physica status solidi (RRL)–Rapid Research Letters 8 (2), 167-171, 2014 | | 2014 |
| Photoemission studies of surface preparation and passivation of InGaAs L Chauhan Dublin City University, 2013 | | 2013 |
