Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston Universitybu.edu의 이메일 확인됨
Anirban BhattacharyyaUniversity of Calcuttacaluniv.ac.in의 이메일 확인됨
Hock M. NgOctopus Innovation Partnersoctoip.com의 이메일 확인됨
Karl LudwigProfessor of Physics, Boston Universitybu.edu의 이메일 확인됨
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHphysics.uoc.gr의 이메일 확인됨
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresdenhzdr.de의 이메일 확인됨
Yitao LiaoBoston Universitybu.edu의 이메일 확인됨
Dimitris Korakakismail.wvu.edu의 이메일 확인됨
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano Bicoccaunimib.it의 이메일 확인됨
Piotr PerlinInstitute of High Pressure Physicsunipress.waw.pl의 이메일 확인됨
Henryk TeisseyreInstitute of Physics of the Polish Academy of Sciencesifpan.edu.pl의 이메일 확인됨
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston Universitybu.edu의 이메일 확인됨
Michał Leszczynskiunipress.waw.pl의 이메일 확인됨
Wei ZhangBoston University Photonics Centerphysics.bu.edu의 이메일 확인됨
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, Bostonbu.edu의 이메일 확인됨
Papo Chen, T.C. Chen, Tai-Chou Che...Boston Universityamat.com의 이메일 확인됨
Enrico BellottiBoston University Georgia Institute of Technologybu.edu의 이메일 확인됨
HAIDING SUNProfessor of University of Science and Technology of Chinaustc.edu.cn의 이메일 확인됨
Emanuele Francesco PecoraTechnology Managerhq.doe.gov의 이메일 확인됨
Cristian StagarescuOptical Engineer SPE (Senior Principal Engineer), Photonic Devices Development, MACOMmacom.com의 이메일 확인됨

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Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

bu.edu의 이메일 확인됨 - 홈페이지

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


제목 서지정보순 정렬 연도순 정렬 제목순 정렬	인용 인용	연도
Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	808	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	640	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	561	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	557	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	554	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	526	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	412	1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	361	1993
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	339	1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	333	2011
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	332	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	314	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	294	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	286	1995
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	285	1994
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	251	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	237	1993
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	236	1994
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	218	1995

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