| Metabolic control analysis in drug discovery and disease M Cascante, LG Boros, B Comin-Anduix, P de Atauri, JJ Centelles, ... Nature biotechnology 20 (3), 243-249, 2002 | 356 | 2002 |
| Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ... Electron Device Letters, IEEE, 1-3, 2011 | 296 | 2011 |
| Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications J Lee, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang Applied Physics Letters 97, 172105, 2010 | 169 | 2010 |
| -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ... Journal of Applied Physics 109 (3), 033712, 2011 | 162 | 2011 |
| An electrically modifiable synapse array of resistive switching memory H Choi, H Jung, J Lee, J Yoon, J Park, D Seong, W Lee, M Hasan, ... Nanotechnology 20, 345201, 2009 | 161 | 2009 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaO x/TiO2/TaO x Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano, 2012 | 146 | 2012 |
| Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 19.5. 1-19.5. 4, 2010 | 124 | 2010 |
| Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications X Liu, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang Electron Device Letters, IEEE, 1-3, 2011 | 117* | 2011 |
| Ultrathin (< 10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... VLSI Technology (VLSIT), 2012 Symposium on, 155-156, 2012 | 107 | 2012 |
| Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang Electron Device Letters, IEEE 32 (4), 476-478, 2011 | 101 | 2011 |
| Varistor-type Bidirectional Switch (JMAX> 107A/cm2, Selectivity~ 104) for 3D Bipolar Resistive Memory Arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... VLSI Technology (VLSIT), 2012 Symposium on, 37-38, 2012 | 93 | 2012 |
| Co-Occurrence of Threshold Switching and Memory Switching in {Pt}/{NbO} _ {x}/{Pt} Cells for Crosspoint Memory Applications X Liu, S Md Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang IEEE Electron Device Letters 33, 236-238, 2012 | 79 | 2012 |
| Resistive-Switching Characteristics of $ hbox {Al}/hbox {Pr} _ {0.7} hbox {Ca} _ {0.3} hbox {MnO} _ {3} $ for Nonvolatile Memory Applications DJ Seong, M Hassan, H Choi, J Lee, J Yoon, JB Park, W Lee, MS Oh, ... Electron Device Letters, IEEE 30 (9), 919-921, 2009 | 74 | 2009 |
| Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 67 | 2013 |
| Investigation of state stability of low-resistance state in resistive memory J Park, M Jo, EM Bourim, J Yoon, DJ Seong, J Lee, W Lee, H Hwang IEEE Electron Device Letters 31 (5), 485-487, 2010 | 66 | 2010 |
| Self-Selective Characteristics of Nanoscale VOx Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE ELECTRON DEVICE LETTERS 33 (5), 2012 | 60 | 2012 |
| Effect of Scaling -Based RRAMs on Their Resistive Switching Characteristics S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ... Electron Device Letters, IEEE, 1-3, 2011 | 58 | 2011 |
| Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 device for nonvolatile memory applications D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ... Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 48 | 2009 |
| Improved switching uniformity and speed in filament-type RRAM using lightning rod effect J Park, M Jo, J Lee, S Jung, S Kim, W Lee, J Shin, H Hwang IEEE electron device letters 32 (1), 63-65, 2010 | 44 | 2010 |
| Resistive switching characteristics of ultra-thin TiOx J Park, S Jung, J Lee, W Lee, S Kim, J Shin, H Hwang Microelectronic Engineering, 2011 | 42 | 2011 |
Seonghyun KimSchool of Material Science and Engineering, Gwangju Institute of Science and TechnologyVerified email at gist.ac.kr
