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Hyeon Jun Hwang
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Fast transient charging at the graphene/ interface causing hysteretic device characteristics
YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ...
Applied Physics Letters 98 (18), 183508, 2011
1662011
Effects of multi-layer graphene capping on Cu interconnects
CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ...
Nanotechnology 24 (11), 115707, 2013
862013
Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors
CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee
Carbon 53, 182-187, 2013
592013
Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method
YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee
Carbon 60, 453-460, 2013
572013
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack
W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
452013
Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
442011
Ferroelectric polymer-gated graphene memory with high speed conductivity modulation
HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ...
Nanotechnology 24 (17), 175202, 2013
352013
Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment
CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ...
IEEE electron device letters 32 (11), 1591-1593, 2011
292011
Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors
Y Gon Lee, Y Ji Kim, C Goo Kang, C Cho, S Lee, H Jun Hwang, U Jung, ...
Applied Physics Letters 102 (9), 093121, 2013
252013
Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts
TJ Yoo, YJ Kim, SK Lee, CG Kang, KE Chang, HJ Hwang, N Revannath, ...
ACS Photonics 5 (2), 365-370, 2018
222018
A study of the leakage current in TiN/HfO2/TiN capacitors
S Cimino, A Padovani, L Larcher, VV Afanas’Ev, HJ Hwang, YG Lee, ...
Microelectronic engineering 95, 71-73, 2012
222012
A graphene barristor using nitrogen profile controlled ZnO Schottky contacts
HJ Hwang, KE Chang, WB Yoo, CH Shim, SK Lee, JH Yang, SY Kim, ...
Nanoscale 9 (7), 2442-2448, 2017
212017
Threshold voltage modulation of a graphene–ZnO barristor using a polymer doping process
SY Kim, J Hwang, YJ Kim, HJ Hwang, M Son, N Revannath, MH Ham, ...
Advanced Electronic Materials 5 (7), 1800805, 2019
182019
Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition
J Huang, AT Lucero, L Cheng, HJ Hwang, MW Ha, J Kim
Applied Physics Letters 106 (12), 123101, 2015
172015
Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer
C Kim, TJ Yoo, KE Chang, MG Kwon, HJ Hwang, BH Lee
Nanophotonics 10 (5), 1573-1579, 2021
162021
Correlation between the hysteresis and the initial defect density of graphene
C Cho, Y Gon Lee, U Jung, C Goo Kang, S Lim, H Jun Hwang, H Choi, ...
Applied Physics Letters 103 (8), 083110, 2013
162013
Issues with the electrical characterization of graphene devices
BH Lee, YG Lee, UJ Jung, YH Kim, HJ Hwang, JJ Kim, CG Kang
Carbon letters 13 (1), 23-28, 2012
162012
Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC
HJ Hwang, C Cho, SK Lim, SY Lee, CG Kang, H Hwang, BH Lee
Applied Physics Letters 99 (8), 082111, 2011
162011
Advantages of a buried-gate structure for graphene field-effect transistor
SK Lee, YJ Kim, S Heo, W Park, TJ Yoo, C Cho, HJ Hwang, BH Lee
Semiconductor Science and Technology 34 (5), 055010, 2019
152019
Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern
C Cho, SK Lee, JW Noh, W Park, S Lee, YG Lee, HJ Hwang, CG Kang, ...
Applied Physics Letters 106 (21), 213107, 2015
142015
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