| Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ... Applied Physics Letters 98 (18), 2011 | 177 | 2011 |
| Effects of multi-layer graphene capping on Cu interconnects CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ... Nanotechnology 24 (11), 115707, 2013 | 96 | 2013 |
| Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee Carbon 60, 453-460, 2013 | 65 | 2013 |
| Electron devices meeting (IEDM) HY Lee, YS Chen, PS Chen, RY Gu, YY Hsu, SM Wang, WH Liu, CH Tsai, ... IEEE International, 19-7, 2010 | 63* | 2010 |
| Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee Carbon 53, 182-187, 2013 | 62 | 2013 |
| Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ... Nanotechnology 24 (47), 475501, 2013 | 52 | 2013 |
| Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ... Nanotechnology 22 (29), 295201, 2011 | 45 | 2011 |
| Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer C Kim, TJ Yoo, KE Chang, MG Kwon, HJ Hwang, BH Lee Nanophotonics 10 (5), 1573-1579, 2021 | 42 | 2021 |
| Ferroelectric polymer-gated graphene memory with high speed conductivity modulation HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ... Nanotechnology 24 (17), 175202, 2013 | 41 | 2013 |
| Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts TJ Yoo, YJ Kim, SK Lee, CG Kang, KE Chang, HJ Hwang, N Revannath, ... Acs Photonics 5 (2), 365-370, 2018 | 32 | 2018 |
| Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ... IEEE electron device letters 32 (11), 1591-1593, 2011 | 28 | 2011 |
| A graphene barristor using nitrogen profile controlled ZnO Schottky contacts HJ Hwang, KE Chang, WB Yoo, CH Shim, SK Lee, JH Yang, SY Kim, ... Nanoscale 9 (7), 2442-2448, 2017 | 25 | 2017 |
| Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors Y Gon Lee, Y Ji Kim, C Goo Kang, C Cho, S Lee, H Jun Hwang, U Jung, ... Applied Physics Letters 102 (9), 2013 | 25 | 2013 |
| A study of the leakage current in TiN/HfO2/TiN capacitors S Cimino, A Padovani, L Larcher, VV Afanas’Ev, HJ Hwang, YG Lee, ... Microelectronic engineering 95, 71-73, 2012 | 24 | 2012 |
| A Facile Method for Improving Detectivity of Graphene/p‐Type Silicon Heterojunction Photodetector TJ Yoo, SY Kim, MG Kwon, C Kim, KE Chang, HJ Hwang, BH Lee Laser & Photonics Reviews 15 (8), 2000557, 2021 | 23 | 2021 |
| Threshold voltage modulation of a graphene–ZnO barristor using a polymer doping process SY Kim, J Hwang, YJ Kim, HJ Hwang, M Son, N Revannath, MH Ham, ... Advanced Electronic Materials 5 (7), 1800805, 2019 | 21 | 2019 |
| A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film B Allouche, HJ Hwang, TJ Yoo, BH Lee Nanoscale 12 (6), 3894-3901, 2020 | 20 | 2020 |
| Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition J Huang, AT Lucero, L Cheng, HJ Hwang, MW Ha, J Kim Applied Physics Letters 106 (12), 2015 | 20 | 2015 |
| Advantages of a buried-gate structure for graphene field-effect transistor SK Lee, YJ Kim, S Heo, W Park, TJ Yoo, C Cho, HJ Hwang, BH Lee Semiconductor Science and Technology 34 (5), 055010, 2019 | 17 | 2019 |
| Facile process to clean PMMA residue on graphene using KrF laser annealing HJ Hwang, Y Lee, C Cho, BH Lee AIP Advances 8 (10), 2018 | 17 | 2018 |
