| Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors M Mativenga, MH Choi, JW Choi, J Jang IEEE Electron Device Letters 32 (2), 170-172, 2010 | 213 | 2010 |
| Bulk accumulation a-IGZO TFT for high current and turn-on voltage uniformity M Mativenga, S An, J Jang IEEE electron device letters 34 (12), 1533-1535, 2013 | 140 | 2013 |
| Fully transparent and rollable electronics M Mativenga, D Geng, B Kim, J Jang ACS applied materials & interfaces 7 (3), 1578-1585, 2015 | 131 | 2015 |
| A full-swing a-IGZO TFT-based inverter with a top-gate-bias-induced depletion load MJ Seok, MH Choi, M Mativenga, D Geng, DY Kim, J Jang IEEE electron device letters 32 (8), 1089-1091, 2011 | 115 | 2011 |
| Highly robust neutral plane oxide TFTs withstanding 0.25 mm bending radius for stretchable electronics YH Kim, E Lee, JG Um, M Mativenga, J Jang Scientific Reports 6 (1), 25734, 2016 | 108 | 2016 |
| High-speed dual-gate a-IGZO TFT-based circuits with top-gate offset structure X Li, D Geng, M Mativenga, J Jang IEEE Electron Device Letters 35 (4), 461-463, 2014 | 94 | 2014 |
| Amorphous-InGaZnO4 thin-film transistors with damage-free back channel wet-etch process SH Ryu, YC Park, M Mativenga, DH Kang, J Jang ECS Solid State Letters 1 (2), Q17, 2012 | 92 | 2012 |
| Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths M Mativenga, M Seok, J Jang Applied Physics Letters 99 (12), 2011 | 89 | 2011 |
| Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time J Gwang Um, M Mativenga, P Migliorato, J Jang Applied Physics Letters 101 (11), 2012 | 88 | 2012 |
| Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress JG Um, M Mativenga, J Jang Applied Physics Letters 103 (3), 2013 | 81 | 2013 |
| Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, GN Heiler, ... IEEE Transactions on Electron Devices 62 (3), 869-874, 2015 | 80 | 2015 |
| Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer H Jeong, B Lee, Y Lee, J Lee, M Yang, I Kang, M Mativenga, J Jang Applied Physics Letters 104 (2), 2014 | 78 | 2014 |
| Highly robust bendable oxide thin‐film transistors on polyimide substrates via mesh and strip patterning of device layers S Lee, D Jeong, M Mativenga, J Jang Advanced Functional Materials 27 (29), 1700437, 2017 | 72 | 2017 |
| High-speed pseudo-CMOS circuits using bulk accumulation a-IGZO TFTs Y Chen, D Geng, M Mativenga, H Nam, J Jang IEEE Electron Device Letters 36 (2), 153-155, 2014 | 70 | 2014 |
| Analysis of improved performance under negative bias illumination stress of dual gate driving a-IGZO TFT by TCAD simulation MM Billah, MDH Chowdhury, M Mativenga, JG Um, RK Mruthyunjaya, ... IEEE Electron Device Letters 37 (6), 735-738, 2016 | 69 | 2016 |
| Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors D Han Kang, J Ung Han, M Mativenga, S Hwa Ha, J Jang Applied Physics Letters 102 (8), 2013 | 65 | 2013 |
| High-speed and low-voltage-driven shift register with self-aligned coplanar a-IGZO TFTs D Geng, DH Kang, MJ Seok, M Mativenga, J Jang IEEE Electron Device Letters 33 (7), 1012-1014, 2012 | 65 | 2012 |
| High-performance drain-offset a-IGZO thin-film transistors M Mativenga, MH Choi, DH Kang, J Jang IEEE electron device letters 32 (5), 644-646, 2011 | 63 | 2011 |
| High current stress effects in amorphous-InGaZnO4 thin-film transistors M Mativenga, S Hong, J Jang Applied Physics Letters 102 (2), 2013 | 60 | 2013 |
| 30-Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays D Geng, YF Chen, M Mativenga, J Jang IEEE electron device letters 36 (8), 805-807, 2015 | 59 | 2015 |
