| True breakdown voltage and overvoltage margin of GaN power HEMTs in hard switching JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang IEEE Electron Device Letters 42 (4), 505-508, 2021 | 62 | 2021 |
| Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 60 | 2023 |
| Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 51 | 2020 |
| Robustness of cascode GaN HEMTs in unclamped inductive switching Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021 | 44 | 2021 |
| Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 27 | 2022 |
| Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 17 | 2021 |
| Dynamic gate breakdown of p-gate GaN HEMTs in inductive power switching B Wang, R Zhang, H Wang, Q He, Q Song, Q Li, F Udrea, Y Zhang IEEE Electron Device Letters 44 (2), 217-220, 2022 | 16 | 2022 |
| Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 363-369, 2021 | 14 | 2021 |
| Robustness of GaN gate injection transistors under repetitive surge energy and overvoltage JP Kozak, Q Song, R Zhang, J Liu, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 14 | 2021 |
| Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 12 | 2021 |
| Hard-switched overvoltage robustness of p-gate GaN HEMTs at increasing temperatures JP Kozak, R Zhang, J Liu, Q Song, M Xiao, Y Zhang 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 677-682, 2020 | 12 | 2020 |
| Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination M Xiao, Y Wang, R Zhang, Q Song, M Porter, E Carlson, K Cheng, K Ngo, ... IEEE Electron Device Letters, 2023 | 11 | 2023 |
| Chip size minimization for wide and ultrawide bandgap power devices B Wang, M Xiao, Z Zhang, Y Wang, Y Qin, Q Song, GQ Lu, K Ngo, ... IEEE Transactions on Electron Devices 70 (2), 633-639, 2023 | 11 | 2023 |
| Overvoltage ruggedness and dynamic breakdown voltage of P-gate GaN HEMTs in high-frequency switching up to megahertz R Zhang, Q Song, Q Li, Y Zhang 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 175-180, 2022 | 9 | 2022 |
| Overvoltage robustness of p-Gate GaN HEMTs in high frequency switching up to megahertz R Zhang, Q Song, Q Li, Y Zhang IEEE Transactions on Power Electronics 38 (5), 6063-6072, 2023 | 8 | 2023 |
| Output capacitance loss of GaN HEMTs in steady-state switching Q Song, R Zhang, Q Li, Y Zhang IEEE Transactions on Power Electronics, 2023 | 7 | 2023 |
| A simple and accurate method to characterize output capacitance losses of GaN HEMTs Q Song, R Zhang, Q Li, Y Zhang 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022 | 7 | 2022 |
| NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed M Xiao, B Wang, R Zhang, Q Song, J Spencer, Z Du, Y Qin, K Sasaki, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 5 | 2023 |
| Accelerating the recovery of p-Gate GaN HEMTs after overvoltage stresses JP Kozak, Q Song, J Liu, R Zhang, Q Li, W Saito, Y Zhang 2022 IEEE International Reliability Physics Symposium (IRPS), P22-1-P22-5, 2022 | 5 | 2022 |
| GaN MIS-HEMTs in repetitive overvoltage switching: Parametric shift and recovery Q Song, JP Kozak, Y Ma, J Liu, R Zhang, R Volkov, D Sherman, KV Smith, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 10B. 4-1-10B. 4-7, 2022 | 4 | 2022 |
Yuhao ZhangCPES, Virginia TechVerified email at vt.edu
