| Radiation damage effects in Ga 2 O 3 materials and devices J Kim, SJ Pearton, C Fares, J Yang, F Ren, S Kim, AY Polyakov Journal of Materials Chemistry C 7 (1), 10-24, 2019 | 243 | 2019 |
| Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, EB Yakimov, SJ Pearton, ... Applied Physics Letters 113 (9), 2018 | 102 | 2018 |
| Unipolar electron transport polymers: a thiazole based all-electron acceptor approach Z Yuan, B Fu, S Thomas, S Zhang, G DeLuca, R Chang, L Lopez, C Fares, ... Chemistry of Materials 28 (17), 6045-6049, 2016 | 87 | 2016 |
| Temperature-dependent electrical characteristics of β-Ga2O3 diodes with W Schottky contacts up to 500° C C Fares, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 8 (7), Q3007, 2018 | 78 | 2018 |
| Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays J Yang, M Xian, P Carey, C Fares, J Partain, F Ren, M Tadjer, E Anber, ... Applied physics letters 114 (23), 2019 | 69 | 2019 |
| Reverse breakdown in large area, field-plated, vertical β-Ga2O3 rectifiers J Yang, C Fares, R Elhassani, M Xian, F Ren, SJ Pearton, M Tadjer, ... ECS Journal of Solid State Science and Technology 8 (7), Q3159, 2019 | 58 | 2019 |
| Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ... Journal of Vacuum Science & Technology A 39 (1), 2021 | 44 | 2021 |
| Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3 MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ... ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019 | 42 | 2019 |
| 60Co gamma ray damage in homoepitaxial β-Ga2O3 Schottky rectifiers J Yang, GJ Koller, C Fares, F Ren, SJ Pearton, J Bae, J Kim, DJ Smith ECS Journal of Solid State Science and Technology 8 (7), Q3041, 2019 | 36 | 2019 |
| Demonstration of a SiC protective coating for titanium implants C Fares, SM Hsu, M Xian, X Xia, F Ren, JJ Mecholsky Jr, L Gonzaga, ... Materials 13 (15), 3321, 2020 | 35 | 2020 |
| Switching behavior and forward bias degradation of 700V, 0.2 A, β-Ga2O3 vertical geometry rectifiers J Yang, C Fares, F Ren, YT Chen, YT Liao, CW Chang, J Lin, M Tadjer, ... ECS Journal of Solid State Science and Technology 8 (7), Q3028, 2019 | 35 | 2019 |
| Effects of fluorine incorporation into β-Ga2O3 J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ... Journal of Applied Physics 123 (16), 2018 | 35 | 2018 |
| The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton AIP Advances 9 (8), 2019 | 34 | 2019 |
| Device processing and junction formation needs for ultra-high power Ga2O3 electronics F Ren, JC Yang, C Fares, SJ Pearton MRS Communications 9 (1), 77-87, 2019 | 34 | 2019 |
| Titanium corrosion in peri-implantitis MD Soler, SM Hsu, C Fares, F Ren, RJ Jenkins, L Gonzaga, AE Clark, ... Materials 13 (23), 5488, 2020 | 29 | 2020 |
| Band alignment of atomic layer deposited SiO2 on (010)(Al0. 14Ga0. 86) 2O3 C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton Journal of Vacuum Science & Technology B 36 (6), 2018 | 29 | 2018 |
| Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600° C M Xian, C Fares, F Ren, BP Gila, YT Chen, YT Liao, M Tadjer, SJ Pearton Journal of Vacuum Science & Technology B 37 (6), 2019 | 28 | 2019 |
| Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 C Fares, F Ren, E Lambers, DC Hays, BP Gila, SJ Pearton Journal of Electronic Materials 48, 1568-1573, 2019 | 27 | 2019 |
| Anti-bacterial properties and biocompatibility of novel SiC coating for dental ceramic SE Afonso Camargo, AS Mohiuddeen, C Fares, JL Partain, PH Carey IV, ... Journal of Functional Biomaterials 11 (2), 33, 2020 | 26 | 2020 |
| Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010)(Al0. 14Ga0. 86) 2O3 C Fares, F Ren, DC Hays, BP Gila, M Tadjer, KD Hobart, SJ Pearton Applied Physics Letters 113 (18), 2018 | 26 | 2018 |
