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Dae-Kyoung Kim
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P–N Junction Diode using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices
DK Kim, SB Hong, K Jeong, C Lee, H Kim, MH Cho
ACS nano 13 (2), 1683-1693, 2019
422019
Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
DK Kim, KS Jeong, YS Kang, HK Kang, SW Cho, SO Kim, D Suh, S Kim, ...
Scientific reports 6 (1), 34945, 2016
422016
Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO2–Al2O3 Stacked Films on GaAs
YS Kang, DK Kim, KS Jeong, MH Cho, CY Kim, KB Chung, H Kim, ...
ACS Applied Materials & Interfaces 5 (6), 1982-1989, 2013
412013
Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates
HK Kang, YS Kang, DK Kim, M Baik, JD Song, Y An, H Kim, MH Cho
ACS Applied Materials & Interfaces 9 (20), 17526-17535, 2017
242017
Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability
YS Kang, HK Kang, DK Kim, KS Jeong, M Baik, Y An, H Kim, JD Song, ...
ACS applied materials & interfaces 8 (11), 7489-7498, 2016
222016
Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems
HK Kang, YS Kang, M Baik, KS Jeong, DK Kim, JD Song, MH Cho
The Journal of Physical Chemistry C 122 (13), 7226-7235, 2018
192018
Electric field effect dominated bipolar resistive switching through interface control in a Pt/TiO 2/TiN structure
DH Lim, GY Kim, JH Song, KS Jeong, DC Kim, SW Nam, MH Cho, TG Lee
RSC Advances 5 (1), 221-230, 2015
192015
Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics
YS Kang, DK Kim, HK Kang, KS Jeong, MH Cho, DH Ko, H Kim, JH Seo, ...
ACS applied materials & interfaces 6 (6), 3896-3906, 2014
172014
Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer
SB Hong, DK Kim, J Chae, K Kim, K Jeong, J Kim, H Park, Y Yi, MH Cho
ACS applied materials & interfaces 12 (23), 26649-26658, 2020
142020
Effects of spontaneous nitrogen incorporation by a 4 H-SiC (0001) surface caused by plasma nitridation
DK Kim, YS Kang, KS Jeong, HK Kang, SW Cho, KB Chung, H Kim, ...
Journal of Materials Chemistry C 3 (19), 5078-5088, 2015
102015
Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition
YS Kang, DK Kim, HK Kang, S Cho, S Choi, H Kim, JH Seo, J Lee, ...
The Journal of Physical Chemistry C 119 (11), 6001-6008, 2015
92015
Enhancement of photoresponse in Bi2Se3/graphene heterostructures by effective electron–hole separation through internal band bending
J Chae, SB Hong, D Kim, DK Kim, J Kim, K Jeong, SH Park, MH Cho
Applied Surface Science 554, 149623, 2021
82021
Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlO x atomic layer deposition
DK Kim, J Chae, SB Hong, H Park, KS Jeong, HW Park, SR Kwon, ...
Nanoscale 10 (48), 22896-22907, 2018
82018
Topological insulator bismuth selenide grown on black phosphorus for sensitive broadband photodetection
DK Kim, SB Hong, J Kim, MH Cho
Journal of Materials Chemistry C 9 (42), 15150-15157, 2021
72021
Reduction of defect states in atomic-layered HfO2 film on SiC substrate using post-nitridation annealing
S Kwon, DK Kim, MH Cho, KB Chung
Thin Solid Films 645, 102-107, 2018
72018
Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP
C Mahata, Y An, S Choi, YC Byun, DK Kim, T Lee, J Kim, MH Cho, H Kim
Current Applied Physics 16 (3), 294-299, 2016
62016
Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment
YS Kang, DK Kim, MH Cho, JH Seo, HK Shon, TG Lee, YD Cho, SW Kim, ...
physica status solidi (a) 210 (8), 1612-1617, 2013
42013
Structural Evolution and Electrical Properties of Highly Active Plasma Process on 4H-SiC
DK Kim, MH Cho
Applied Science and Convergence Technology 26 (5), 133-138, 2017
22017
Al2O3 Passivation Effect in HfO2· Al2O3 Laminate Structures Grown on InP Substrates
K Hang-Kyu, K Yu-Seon, K Dae-Kyoung, B Min, S Jin-Dong, A Youngseo, ...
2017
Structural and Electrical Properties of EOT HfO2 (< 1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability
K Yu-Seon, K Hang-Kyu, K Dae-Kyoung, J Kwang-Sik, B Min, ...
2016
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