Bongki Lee
Bongki Lee
Technology Development Engineer, GLOBALFOUNDRIES
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Cited by
Cited by
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 071901, 2008
Conformal dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim
Applied Physics Letters 92 (20), 203102, 2008
Ozone adsorption on graphene: ab initio study and experimental validation
G Lee, B Lee, J Kim, K Cho
arXiv preprint arXiv:0906.2243, 2009
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
Characteristics of high-k dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ...
Applied Physics Letters 97 (4), 043107, 2010
Comparison of the sputter rates of oxide films relative to the sputter rate of
DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010
Frequency dispersion reduction and bond conversion on -type GaAs by in situ surface oxide removal and passivation
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 163512, 2007
A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films
B Lee, KJ Choi, A Hande, MJ Kim, RM Wallace, J Kim, Y Senzaki, ...
Microelectronic engineering 86 (3), 272-276, 2009
The effect of graphite surface condition on the composition of by atomic layer deposition
A Pirkle, S McDonnell, B Lee, J Kim, L Colombo, RM Wallace
Applied Physics Letters 97 (8), 082901, 2010
Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
B Lee, TJ Park, A Hande, MJ Kim, RM Wallace, J Kim, X Liu, JH Yi, H Li, ...
Microelectronic engineering 86 (7-9), 1658-1661, 2009
Effects of surface treatment on work function of ITO (Indium Tin Oxide) films
C Kim, B Lee, HJ Yang, HM Lee, JG Lee, H Shin
Journal of the Korean Physical Society 47 (9), 417, 2005
In situ study of surface reactions of atomic layer deposited films on atomically clean
FS Aguirre-Tostado, M Milojevic, B Lee, J Kim, RM Wallace
Applied Physics Letters 93 (17), 172907, 2008
Effects of and oxidants on C and N-related impurities in atomic-layer-deposited films observed by in situ x-ray photoelectron spectroscopy
TJ Park, P Sivasubramani, BE Coss, HC Kim, B Lee, RM Wallace, J Kim, ...
Applied Physics Letters 97 (9), 092904, 2010
Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices
B Lee, G Mordi, T Park, L Goux, YJ Chabal, K Cho, EM Vogel, M Kim, ...
ECS Transactions 19 (5), 225, 2009
Measurement and visualization of doping profile in silicon using Kelvin probe force microscopy (KPFM)
H Shin, B Lee, C Kim, H Park, DK Min, J Jung, S Hong, S Kim
Electronic Materials Letters 1 (2), 127-133, 2005
Local work function measurements on various inorganic materials using Kelvin probe force spectroscopy
CH Kim, CD Bae, KH Ryu, BK Lee, HJ Shin
Solid State Phenomena 124, 607-610, 2007
ALD of LaHfOx nano-laminates for high-κ gate dielectric applications
B Lee, A Hande, TJ Park, KJ Chung, J Ahn, M Rousseau, D Hong, H Li, ...
Microelectronic engineering 88 (12), 3385-3388, 2011
Surface energy induced patterning of organic and inorganic materials on heterogeneous Si surfaces
L Tao, A Crouch, F Yoon, BK Lee, JS Guthi, J Kim, J Gao, W Hu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
In situ electrical studies of ozone based atomic layer deposition on graphene
S Jandhyala, G Mordi, B Lee, J Kim
ECS Transactions 45 (4), 39, 2012
Piezoelectric effect in epitaxial PbZr1− xTixO3 thin films near morphotropic phase boundary region
YK Kim, SS Kim, B Lee, H Shin, S Baik
Journal of materials research 20 (4), 787-790, 2005
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