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Dr. Mohammad Abdul Alim
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Numerical development of eco-friendly Cs2TiBr6 based perovskite solar cell with all-inorganic charge transport materials via SCAPS-1D
S Ahmed, F Jannat, MAK Khan, MA Alim
Optik, 165765, 2021
1692021
Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications
MA Alim, AA Rezazadeh, C Gaquiere
IEEE Transactions on Microwave Theory and Techniques 64 (11), 3483-3491, 2016
732016
Graphene patch antennas with different substrate shapes and materials
MAK Khan, TA Shaem, MA Alim
Optik, 163700, 2020
682020
Performance analysis of cesium formamidinium lead mixed halide based perovskite solar cell with MoOx as hole transport material via SCAPS-1D
F Jannat, S Ahmed, MA Alim
Optik 228, 166202, 2021
572021
High-Performance Graphene Patch Antenna with Superstrate Cover for Terahertz Band Application
MAK Khan, MI Ullah, R Kabir, MA Alim
Plasmonics, 2020
542020
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
MA Alim, AA Rezazadeh, C Gaquiere
Solid-state electronics 119, 11-18, 2016
462016
Analysis of graphene based miniaturized terahertz patch antennas for single band and dual band operation
MAK Khan, TA Shaem, MA Alim
Optik 194, 163012, 2019
412019
Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors
MA Alim, AA Rezazadeh, C Gaquiere
Semiconductor Science and Technology 31 (12), DOI: 10.1088/0268-1242/31/12 …, 2016
382016
Temperature-dependent DC and small-signal analysis of AlGaAs/InGaAs pHEMT for high-frequency applications
MA Alim, AA Rezazadeh
IEEE Transactions on Electron Devices 63 (3), 1005-1012, 2016
332016
Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
MA Alim, AA Rezazadeh, C Gaquiere
Semiconductor Science and Technology 30 (12), 125005, 2015
292015
High-gain and ultrawide-band graphene patch antenna with photonic crystal covering 96.48% of the terahertz band
MAK Khan, MI Ullah, MA Alim
Optik 227 (February), 166056, 2021
212021
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
MAK Khan, MA Alim, C Gaquiere
Microelectronic Engineering 238 (February), 111508, 2021
182021
Highly efficient Cesium Titanium (IV) bromide perovskite solar cell and its point defect investigation: A computational study
AK Khan, SS Urmi, TT Ferdous, S Azam, MA Alim
Superlattices and Microstructures 156, 106946, 2021
162021
Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures
MA Alim, AZ Chowdhury, S Islam, C Gaquiere, G Crupi
Electronics 10 (9), 1115, 2021
162021
Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC
M A Alim, A Rezazadeh
IEEE Transactions on Electron Devices, 2017
152017
Temperature dependence of the Taylor series coefficients and intermodulation distortion characteristics of GaN HEMT
MA Alim, MM Ali, AA Rezazadeh, C Gaquiere
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019
142019
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs
MA Alim, AA Rezazadeh, C Gaquiere
Solid-state electronics 126, 67-74, 2016
142016
Thermal response and correlation between mobility and kink effect in GaN HEMTs
MA Alim, S Afrin, AA Rezazadeh, C Gaquière
Microelectronic Engineering 219, 111148, 2020
132020
Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications
MA Alim, MM Ali, AA Rezazadeh, C Gaquiere
Microelectronic Engineering 209 (15 March 2019), 53-59, 2019
122019
Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications
MA Alim, AA Rezazadeh, C Gaquiere, G Crupi
Semiconductor Science and Technology 34 (3), 035002, 2019
122019
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학술자료 1–20