Numerical development of eco-friendly Cs2TiBr6 based perovskite solar cell with all-inorganic charge transport materials via SCAPS-1D S Ahmed, F Jannat, MAK Khan, MA Alim Optik, 165765, 2021 | 169 | 2021 |
Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications MA Alim, AA Rezazadeh, C Gaquiere IEEE Transactions on Microwave Theory and Techniques 64 (11), 3483-3491, 2016 | 73 | 2016 |
Graphene patch antennas with different substrate shapes and materials MAK Khan, TA Shaem, MA Alim Optik, 163700, 2020 | 68 | 2020 |
Performance analysis of cesium formamidinium lead mixed halide based perovskite solar cell with MoOx as hole transport material via SCAPS-1D F Jannat, S Ahmed, MA Alim Optik 228, 166202, 2021 | 57 | 2021 |
High-Performance Graphene Patch Antenna with Superstrate Cover for Terahertz Band Application MAK Khan, MI Ullah, R Kabir, MA Alim Plasmonics, 2020 | 54 | 2020 |
Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications MA Alim, AA Rezazadeh, C Gaquiere Solid-state electronics 119, 11-18, 2016 | 46 | 2016 |
Analysis of graphene based miniaturized terahertz patch antennas for single band and dual band operation MAK Khan, TA Shaem, MA Alim Optik 194, 163012, 2019 | 41 | 2019 |
Temperature dependence of the threshold voltage of AlGaN/GaN/SiC high electron mobility transistors MA Alim, AA Rezazadeh, C Gaquiere Semiconductor Science and Technology 31 (12), DOI: 10.1088/0268-1242/31/12 …, 2016 | 38 | 2016 |
Temperature-dependent DC and small-signal analysis of AlGaAs/InGaAs pHEMT for high-frequency applications MA Alim, AA Rezazadeh IEEE Transactions on Electron Devices 63 (3), 1005-1012, 2016 | 33 | 2016 |
Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate MA Alim, AA Rezazadeh, C Gaquiere Semiconductor Science and Technology 30 (12), 125005, 2015 | 29 | 2015 |
High-gain and ultrawide-band graphene patch antenna with photonic crystal covering 96.48% of the terahertz band MAK Khan, MI Ullah, MA Alim Optik 227 (February), 166056, 2021 | 21 | 2021 |
2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT MAK Khan, MA Alim, C Gaquiere Microelectronic Engineering 238 (February), 111508, 2021 | 18 | 2021 |
Highly efficient Cesium Titanium (IV) bromide perovskite solar cell and its point defect investigation: A computational study AK Khan, SS Urmi, TT Ferdous, S Azam, MA Alim Superlattices and Microstructures 156, 106946, 2021 | 16 | 2021 |
Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures MA Alim, AZ Chowdhury, S Islam, C Gaquiere, G Crupi Electronics 10 (9), 1115, 2021 | 16 | 2021 |
Thermal Influence on Multibias Small- and Large-Signal Parameters of GaAs pHEMT Fabricated in Multilayer 3-D MMIC M A Alim, A Rezazadeh IEEE Transactions on Electron Devices, 2017 | 15 | 2017 |
Temperature dependence of the Taylor series coefficients and intermodulation distortion characteristics of GaN HEMT MA Alim, MM Ali, AA Rezazadeh, C Gaquiere IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019 | 14 | 2019 |
Multibias and thermal behavior of microwave GaN and GaAs based HEMTs MA Alim, AA Rezazadeh, C Gaquiere Solid-state electronics 126, 67-74, 2016 | 14 | 2016 |
Thermal response and correlation between mobility and kink effect in GaN HEMTs MA Alim, S Afrin, AA Rezazadeh, C Gaquière Microelectronic Engineering 219, 111148, 2020 | 13 | 2020 |
Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications MA Alim, MM Ali, AA Rezazadeh, C Gaquiere Microelectronic Engineering 209 (15 March 2019), 53-59, 2019 | 12 | 2019 |
Thermal influence on S22 kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications MA Alim, AA Rezazadeh, C Gaquiere, G Crupi Semiconductor Science and Technology 34 (3), 035002, 2019 | 12 | 2019 |