Cheng-Wei Cheng(鄭政瑋)
Cheng-Wei Cheng(鄭政瑋)
Research Staff Member, IBM T.J. Watson Research Center의 이메일 확인됨
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 1-7, 2014
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana
Nature communications 4 (1), 1-7, 2013
Growth of highly tensile-strained Ge on relaxed by metal-organic chemical vapor deposition
Y Bai, KE Lee, C Cheng, ML Lee, EA Fitzgerald
Journal of Applied Physics 104 (8), 084518, 2008
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 086104, 2014
The effect of interface processing on the distribution of interfacial defect states and the CV characteristics of III-V metal-oxide-semiconductor field effect transistors
CW Cheng, G Apostolopoulos, EA Fitzgerald
Journal of Applied Physics 109 (2), 023714, 2011
In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors
CW Cheng, EA Fitzgerald
Applied Physics Letters 93 (3), 031902, 2008
Memory characteristics of nanocrystals self-assembledfrom reduction of an embedded ultrathin film in metal-oxide-semiconductor structures
JY Tseng, CW Cheng, SY Wang, TB Wu, KY Hsieh, R Liu
Applied physics letters 85 (13), 2595-2597, 2004
III-V finFETs on silicon substrate
A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ...
US Patent 8,937,299, 2015
Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy
C Bayram, JA Ott, KT Shiu, CW Cheng, Y Zhu, J Kim, M Razeghi, ...
Advanced Functional Materials 24 (28), 4492-4496, 2014
Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts
A Basu, CW Cheng, WE Haensch, A Majumdar, KT Shiu
US Patent 9,287,362, 2016
Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of on GaAs
CW Cheng, J Hennessy, D Antoniadis, EA Fitzgerald
Applied Physics Letters 95 (8), 082106, 2009
Iii-v finfets on silicon substrate
A Basu, CW Cheng, A Majumdar, RM Martin, U Rana, DK Sadana, ...
US Patent App. 13/800,398, 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 µS/µm at VDD= 0.5 V
Y Sun, A Majumdar, CW Cheng, RM Martin, RL Bruce, JB Yau, DB Farmer, ...
2014 IEEE International Electron Devices Meeting, 25.3. 1-25.3. 4, 2014
Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
Y Sun, A Majumdar, CW Cheng, YH Kim, U Rana, RM Martin, RL Bruce, ...
2013 IEEE International Electron Devices Meeting, 2.7. 1-2.7. 4, 2013
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
X Sun, C D'Emic, CW Cheng, A Majumdar, Y Sun, E Cartier, RL Bruce, ...
2017 Symposium on VLSI Technology, T40-T41, 2017
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures
L Yang, CW Cheng, MT Bulsara, EA Fitzgerald
Journal of Applied Physics 111 (10), 104511, 2012
Improved interfacial state density in interfaces using metal-organic chemical vapor deposition
CW Cheng, EA Fitzgerald
Applied Physics Letters 96 (20), 202101, 2010
Overlapped III-V finfet with doped semiconductor extensions
CW Cheng, E Leobandung, KT Shiu, Y Sun
US Patent 9,059,288, 2015
Dual phase gallium nitride material formation on (100) silicon
C Bayram, CW Cheng, DK Sadana, KT Shiu
US Patent 9,048,173, 2015
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학술자료 1–20