| Spontaneous polarization and piezoelectric constants of III-V nitrides F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 56 (16), R10024, 1997 | 3988 | 1997 |
| Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002 | 1431 | 2002 |
| Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher Applied physics letters 80 (7), 1204-1206, 2002 | 1051 | 2002 |
| Effects of macroscopic polarization in III-V nitride multiple quantum wells V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli Physical Review B 60 (12), 8849, 1999 | 698 | 1999 |
| First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local … A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini Physical Review B 64 (4), 045208, 2001 | 621 | 2001 |
| Macroscopic polarization and band offsets at nitride heterojunctions F Bernardini, V Fiorentini Physical Review B 57 (16), R9427, 1998 | 546 | 1998 |
| Extracting convergent surface energies from slab calculations V Fiorentini, M Methfessel Journal of Physics: Condensed Matter 8 (36), 6525, 1996 | 513 | 1996 |
| Nonlinear macroscopic polarization in III-V nitride alloys F Bernardini, V Fiorentini Physical Review B 64 (8), 085207, 2001 | 438 | 2001 |
| Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences F Bernardini, V Fiorentini physica status solidi (b) 216 (1), 391-398, 1999 | 422 | 1999 |
| Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ... Applied physics letters 74 (14), 2002-2004, 1999 | 394 | 1999 |
| Reconstruction mechanism of fcc transition metal (001) surfaces V Fiorentini, M Methfessel, M Scheffler Physical review letters 71 (7), 1051, 1993 | 318 | 1993 |
| Polarization-based calculation of the dielectric tensor of polar crystals F Bernardini, V Fiorentini, D Vanderbilt Physical review letters 79 (20), 3958, 1997 | 298 | 1997 |
| Accurate calculation of polarization-related quantities in semiconductors F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 63 (19), 193201, 2001 | 297 | 2001 |
| Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons V Fiorentini, M Methfessel, M Scheffler Physical Review B 47 (20), 13353, 1993 | 259 | 1993 |
| Spontaneous 2-Dimensional Carrier Confinement at the -Type Interface P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez Physical review letters 106 (16), 166807, 2011 | 253 | 2011 |
| Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics V Fiorentini, G Gulleri Physical review letters 89 (26), 266101, 2002 | 205 | 2002 |
| Dielectric scaling of the self-energy scissor operator in semiconductors and insulators V Fiorentini, A Baldereschi Physical Review B 51 (23), 17196, 1995 | 193 | 1995 |
| Phase diagram and polarization of stable phases of (Ga1− xInx) 2O3 MB Maccioni, V Fiorentini Applied physics express 9 (4), 041102, 2016 | 172 | 2016 |
| Theory of adsorption and surfactant effect of Sb on Ag (111) S Oppo, V Fiorentini, M Scheffler Physical review letters 71 (15), 2437, 1993 | 167 | 1993 |
| First-principles calculation of the piezoelectric tensor of III–V nitrides F Bernardini, V Fiorentini Applied physics letters 80 (22), 4145-4147, 2002 | 162 | 2002 |
Alessio FilippettiCNR-IOM and University of Cagliaridsf.unica.it의 이메일 확인됨
