Seokjae Lim
Seokjae Lim
Verified email at postech.ac.kr
Title
Cited by
Cited by
Year
RRAM-based synapse devices for neuromorphic systems
K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang
Faraday discussions 213, 421-451, 2019
742019
Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang
IEEE Electron Device Letters 39 (2), 312-315, 2018
452018
Various threshold switching devices for integrate and fire neuron applications
D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ...
Advanced Electronic Materials 5 (9), 1800866, 2019
402019
Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices
J Yoo, J Park, J Song, S Lim, H Hwang
Applied Physics Letters 111 (6), 063109, 2017
342017
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system
C Sung, S Lim, H Kim, T Kim, K Moon, J Song, JJ Kim, H Hwang
Nanotechnology 29 (11), 115203, 2018
282018
Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory
FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang
Nanotechnology 28 (11), 115707, 2017
252017
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy
N Raeis‐Hosseini, S Lim, H Hwang, J Rho
Advanced Electronic Materials 4 (11), 1800360, 2018
222018
Improved synaptic behavior of CBRAM using internal voltage divider for neuromorphic systems
S Lim, M Kwak, H Hwang
IEEE Transactions on Electron Devices 65 (9), 3976-3981, 2018
222018
Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-Bit MLC applications
SH Misha, N Tamanna, J Woo, S Lee, J Song, J Park, S Lim, J Park, ...
ECS Solid State Letters 4 (3), P25, 2015
222015
Monolithic integration of AgTe/TiO2based threshold switching device with TiN liner for steep slope field-effect transistors
J Song, J Park, K Moon, J Woo, S Lim, J Yoo, D Lee, H Hwang
2016 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2016
212016
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
FG Aga, J Woo, S Lee, J Song, J Park, J Park, S Lim, C Sung, H Hwang
AIP Advances 6 (2), 025203, 2016
192016
Self-limited CBRAM with threshold selector for 1S1R crossbar array applications
J Song, J Woo, S Lim, SA Chekol, H Hwang
IEEE Electron Device Letters 38 (11), 1532-1535, 2017
182017
Understanding of proton induced synaptic behaviors in three-terminal synapse device for neuromorphic systems
J Lee, S Lim, M Kwak, J Song, H Hwang
Nanotechnology 30 (25), 255202, 2019
162019
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
J Song, J Woo, J Yoo, SA Chekol, S Lim, C Sung, H Hwang
IEEE Transactions on Electron Devices 64 (11), 4763-4767, 2017
152017
Excellent threshold switching device (Ioff∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd= 0.25 V) FET applications
S Lim, J Yoo, J Song, J Woo, J Park, H Hwang
2016 IEEE International Electron Devices Meeting (IEDM), 34.7. 1-37.7. 4, 2016
132016
An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application
SA Chekol, J Song, J Yoo, S Lim, H Hwang
Applied Physics Letters 114 (10), 102106, 2019
122019
Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2. 7 stoichiometry with high ion diffusivity
J Lee, RD Nikam, S Lim, M Kwak, H Hwang
Nanotechnology 31 (23), 235203, 2020
112020
Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes
J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee
Nanotechnology 30 (30), 305202, 2019
112019
Effects of N-doped GeSbTe buffer layer on switching characteristics of Cu/Al2O3-based CBRAM
S Lim, S Lee, J Woo, D Lee, A Prakash, H Hwang
ECS Solid State Letters 4 (7), Q25, 2015
102015
Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications
A Prakash, JS Park, J Song, SJ Lim, JH Park, J Woo, E Cha, H Hwang
2015 International Symposium on Next-Generation Electronics (ISNE), 1-2, 2015
92015
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