팔로우
Jiyoung Kim
Jiyoung Kim
Professor of Materials Science and Engineering, University of Texas at Dallas
utdallas.edu의 이메일 확인됨 - 홈페이지
제목
인용
인용
연도
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 071901, 2008
4912008
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ...
Nano letters 16 (9), 5437-5443, 2016
3932016
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications
C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin
Chemistry of Materials 20 (3), 756-767, 2008
3682008
Conformal dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim
Applied Physics Letters 92 (20), 203102, 2008
3612008
Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness
H Shin, DK Jeong, J Lee, MM Sung, J Kim
Advanced Materials 16 (14), 1197-1200, 2004
3452004
Metal Contacts on Physical Vapor Deposited Monolayer MoS2
C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ...
ACS nano 7 (12), 11350-11357, 2013
3352013
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
3032013
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance
SJ Kim, J Mohan, SR Summerfelt, J Kim
JOM 71 (1), 246, 2019
266*2019
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ...
Applied Physics Letters 111 (24), 242901, 2017
2632017
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control
MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ...
ACS Nano 10 (6), 6054-6061, 2016
2402016
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
2302015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 111601, 2014
2272014
Ozone adsorption on graphene: ab initio study and experimental validation
G Lee, B Lee, J Kim, K Cho
The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009
2152009
Half-cycle atomic layer deposition reaction studies of on (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 202902, 2008
1902008
Remote Plasma Oxidation and Atomic Layer Etching of MoS2
H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace
ACS applied materials & interfaces 8 (29), 19119-19126, 2016
1712016
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
1562012
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states
GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu
ACS Nano 12 (6), 6292, 2018
1512018
Comparison of the sputter rates of oxide films relative to the sputter rate of
DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010
1502010
Characteristics of high-k Al 2 O 3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ...
Applied Physics Letters 97 (4), 043107-043107-3, 2010
1482010
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
1422017
현재 시스템이 작동되지 않습니다. 나중에 다시 시도해 주세요.
학술자료 1–20