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Federico Faccio
Federico Faccio
Senior Engineer, CERN
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Radiation-induced edge effects in deep submicron CMOS transistors
F Faccio, G Cervelli
IEEE Trans. Nucl. Sci. 52, 2413-2420, 2005
5212005
Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects
G Anelli, M Campbell, M Delmastro, F Faccio, S Floria, A Giraldo, E Heijne, ...
IEEE Transactions on Nuclear Science 46 (6), 1690-1696, 1999
4831999
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
W Snoeys, F Faccio, M Burns, M Campbell, E Cantatore, N Carrer, ...
Nuclear Instruments and Methods in Physics Research Section A: accelerators ¡¦, 2000
2462000
The GBT project
P Moreira, K Wyllie, B Yu, A Marchioro, C Paillard, K Kloukinas, T Fedorov, ...
CERN, 2009
2392009
Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs
F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin
IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015
2202015
Computational method to estimate Single Event Upset rates in an accelerator environment
M Huhtinen, F Faccio
Nuclear Instruments and Methods in Physics Research Section A: Accelerators ¡¦, 2000
2052000
Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments
L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators ¡¦, 2007
1472007
Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65 nm MOSFETs irradiated to ultra-high doses
F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ...
IEEE Trans. Nucl. Sci. 65 (1), 164-174, 2018
1182018
Total ionizing dose effects in shallow trench isolation oxides
F Faccio, HJ Barnaby, XJ Chen, DM Fleetwood, L Gonella, M McLain, ...
Microelectronics Reliability 48 (7), 1000-1007, 2008
1142008
The GBT-SerDes ASIC prototype
P Moreira, S Baron, S Bonacini, O Cobanoglu, F Faccio, S Feger, ...
Journal of Instrumentation 5 (11), C11022, 2010
982010
Optical readout and control systems for the CMS tracker
J Troska, G Cervelli, F Faccio, K Gill, R Grabit, AM Sandvik, F Vasey, ...
Nuclear Science Symposium Conference Record, 2002 IEEE 1, 233-237, 2002
972002
TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters
F Faccio, B Allongue, G Blanchot, C Fuentes, S Michelis, S Orlandi, ...
Radiation and Its Effects on Components and Systems (RADECS), 2009 European ¡¦, 2009
962009
Characterization of a commercial 65 nm CMOS technology for SLHC applications
S Bonacini, P Valerio, R Avramidou, R Ballabriga, F Faccio, K Kloukinas, ...
Journal of Instrumentation 7 (01), P01015, 2012
892012
Optimization of shielded PCB air-core toroids for high-efficiency DC–DC converters
S Orlandi, BA Allongue, G Blanchot, S Buso, F Faccio, CA Fuentes, ...
IEEE Transactions on Power Electronics 26 (7), 1837-1846, 2011
882011
A radiation tolerant gigabit serializer for LHC data transmission
P Moreira, A Marchioro, JP Cachemiche, TH Toifl, F Faccio, G Cervelli, ...
Cern, 2001
882001
Noise characterization of a 0.25 ¥ìm CMOS technology for the LHC experiments
G Anelli, F Faccio, S Florian, P Jarron
Nuclear Instruments and Methods in Physics Research Section A: Accelerators ¡¦, 2001
802001
Deep submicron CMOS technologies for the LHC experiments
P Jarron, G Anelli, T Calin, J Cosculluela, M Campbell, M Delmastro, ...
Nuclear Physics B-Proceedings Supplements 78 (1-3), 625-634, 1999
781999
Single event effects in static and dynamic registers in a 0.25/spl mu/m CMOS technology
F Faccio, K Kloukinas, A Marchioro, T Calin, J Cosculluela, M Nicolaidis, ...
IEEE Transactions on Nuclear Science 46 (6), 1434-1439, 1999
751999
A pixel readout chip for 10-30 MRad in standard 0.25/spl mu/m CMOS
M Campbell, G Anelli, M Burns, E Cantatore, L Casagrande, M Delmastro, ...
IEEE Transactions on Nuclear Science 46 (3), 156-160, 1999
751999
Total dose and single event effects (SEE) in a 0.25 m CMOS technology
F Faccio, G Anelli, M Campbell, M Delmastro, P Jarron, K Kloukinas, ...
Proc. 4th Workshop Electronics for LHC Experiments, 98-36, 1998
711998
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