| Method of forming a dual damascene structure utilizing a three layer hard mask structure N Bekiaris, T Weidman, MD Armacost, MB Naik US Patent 7,226,853, 2007 | 278 | 2007 |
| Homogeneous azeotropic distillation: comparing entrainers L Laroche, HW Andersen, M Morari, N Bekiaris The Canadian Journal of Chemical Engineering 69 (6), 1302-1319, 1991 | 180 | 1991 |
| Multiple steady states in homogeneous azeotropic distillation N Bekiaris, GA Meski, CM Radu, M Morari Industrial & engineering chemistry research 32 (9), 2023-2038, 1993 | 177 | 1993 |
| The curious behavior of homogeneous azeotropic distillation—implications for entrainer selection L Laroche, N Bekiaris, HW Andersen, M Morari AIChE Journal 38 (9), 1309-1328, 1992 | 150 | 1992 |
| Integration of ALD/CVD barriers with porous low k materials H Chung, N Bekiaris, C Marcadal, L Chen US Patent 7,244,683, 2007 | 123 | 2007 |
| Homogeneous azeotropic distillation: separability and flowsheet synthesis L Laroche, N Bekiaris, HW Andersen, M Morari Industrial & engineering chemistry research 31 (9), 2190-2209, 1992 | 116 | 1992 |
| Multiple steady states in heterogeneous azeotropic distillation N Bekiaris, GA Meski, M Morari Industrial & engineering chemistry research 35 (1), 207-227, 1996 | 81 | 1996 |
| Multiple steady states in distillation:∞/∞ predictions, extensions, and implications for design, synthesis, and simulation N Bekiaris, M Morari Industrial & engineering chemistry research 35 (11), 4264-4280, 1996 | 71 | 1996 |
| Cobalt fill for advanced interconnects N Bekiaris, Z Wu, H Ren, M Naik, JH Park, M Lee, TH Ha, W Hou, ... 2017 IEEE international interconnect technology conference (IITC), 1-3, 2017 | 70 | 2017 |
| Method of forming a dual damascene structure using an amorphous silicon hard mask T Weidman, N Bekiaris, J Chang, PH Nguyen US Patent 6,806,203, 2004 | 57* | 2004 |
| Multiple steady states in distillation: effect of VL (L) E inaccuracies N Bekiaris, TE Güttinger, M Morari AIChE Journal 46 (5), 955-979, 2000 | 37 | 2000 |
| Mesoporous films having reduced dielectric constants JE Macdougall, KR Heier, SJ Weigel, TW Weidman, AT Demos, ... US Patent 6,818,289, 2004 | 35 | 2004 |
| Method of photoresist removal in the presence of a dielectric layer having a low k-value MN Kawaguchi, HT Nguyen, N Bekiaris, JS Papanu US Patent 6,991,739, 2006 | 33 | 2006 |
| A lithographic and process assessment of photoresist stabilization for double-patterning using 172-nm photoresist curing N Bekiaris, H Cervera, J Dai, R Kim, A Acheta, T Wallow, J Kye, ... Advances in Resist Materials and Processing Technology XXV 6923, 636-643, 2008 | 32 | 2008 |
| Method of fabricating an ultra low-k dielectric self-aligned via CY Chang, SS Kang, CL Kao, N Bekiaris US Patent 8,992,792, 2015 | 30 | 2015 |
| Ionic additives for extreme low dielectric constant chemical formulations RP Mandal, AT Demos, T Weidman, MP Nault, N Bekiaris, SJ Weigel, ... US Patent 7,265,062, 2007 | 28 | 2007 |
| Mesoporous films having reduced dielectric constants JE MacDougall, KR Heier, SJ Weigel, TW Weidman, AT Demos, ... US Patent 6,592,980, 2003 | 26 | 2003 |
| Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping Z Wu, N Bekiaris, MB Naik, JH Park, MH Lee US Patent 10,410,918, 2019 | 25 | 2019 |
| Ionic additives for extreme low dielectric constant chemical formulations RP Mandal, AT Demos, T Weidman, MP Nault, N Bekiaris, SJ Weigel, ... US Patent 6,576,568, 2003 | 25 | 2003 |
| Methods and systems for controlling critical dimensions in track lithography tools T Michaelson, N Bekiaris US Patent 7,534,627, 2009 | 21 | 2009 |
Manfred MorariElectrical and Systems Engineering, U. of PennsylvaniaVerified email at seas.upenn.edu
