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Byoung Hun Lee
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Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
BH Lee, L Kang, R Nieh, WJ Qi, JC Lee
Applied Physics Letters 76 (14), 1926-1928, 2000
7612000
Charge-transfer-based Gas Sensing Using Atomic-layer MoS2
B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ...
Scientific reports 5 (1), 8052, 2015
5132015
Chemical Sensing of 2D Graphene/MoS2 Heterostructure device
B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ...
ACS applied materials & interfaces 7 (30), 16775-16780, 2015
3702015
Negative oxygen vacancies in as charge traps in high- stacks
JL Gavartin, D Muñoz Ramo, AL Shluger, G Bersuker, BH Lee
Applied Physics Letters 89 (8), 082908, 2006
3392006
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes
J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ...
Small 9 (19), 3295-3300, 2013
3382013
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee
IEEE Electron Device Letters 21 (4), 181-183, 2000
3292000
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22 (25), 254023, 2011
2922011
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
2881999
Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron
M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee
IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014
2662014
MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si
WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
2501999
Electrical and reliability characteristics of deposited directly on Si for gate dielectric application
WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee
Applied Physics Letters 77 (20), 3269-3271, 2000
2282000
Gate stack technology for nanoscale devices
BH Lee, J Oh, HH Tseng, R Jammy, H Huff
materials today 9 (6), 32-40, 2006
2252006
Dipole model explaining high-/metal gate field effect transistor threshold voltage tuning
PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ...
Applied Physics Letters 92 (9), 092901, 2008
2002008
Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties
YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee
Applied physics letters 80 (7), 1249-1251, 2002
2002002
RRAM-based synapse for neuromorphic system with pattern recognition function
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
1912012
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ...
Journal of Applied Physics 100 (9), 094108, 2006
1902006
Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography
JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ...
Advanced Materials 25 (34), 4723-4728, 2013
1842013
Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon
BH Lee, Y Jeon, K Zawadzki, WJ Qi, J Lee
Applied physics letters 74 (21), 3143-3145, 1999
1801999
Neuromorphic speech systems using advanced ReRAM-based synapse
S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ...
2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013
1732013
Fast transient charging at the graphene/ interface causing hysteretic device characteristics
YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ...
Applied Physics Letters 98 (18), 183508, 2011
1682011
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