| Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing BH Lee, L Kang, R Nieh, WJ Qi, JC Lee Applied Physics Letters 76 (14), 1926-1928, 2000 | 761 | 2000 |
| Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ... Scientific reports 5 (1), 8052, 2015 | 513 | 2015 |
| Chemical Sensing of 2D Graphene/MoS2 Heterostructure device B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ... ACS applied materials & interfaces 7 (30), 16775-16780, 2015 | 370 | 2015 |
| Negative oxygen vacancies in as charge traps in high- stacks JL Gavartin, D Muñoz Ramo, AL Shluger, G Bersuker, BH Lee Applied Physics Letters 89 (8), 082908, 2006 | 339 | 2006 |
| Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ... Small 9 (19), 3295-3300, 2013 | 338 | 2013 |
| Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee IEEE Electron Device Letters 21 (4), 181-183, 2000 | 329 | 2000 |
| Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22 (25), 254023, 2011 | 292 | 2011 |
| Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 288 | 1999 |
| Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014 | 266 | 2014 |
| MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 250 | 1999 |
| Electrical and reliability characteristics of deposited directly on Si for gate dielectric application WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee Applied Physics Letters 77 (20), 3269-3271, 2000 | 228 | 2000 |
| Gate stack technology for nanoscale devices BH Lee, J Oh, HH Tseng, R Jammy, H Huff materials today 9 (6), 32-40, 2006 | 225 | 2006 |
| Dipole model explaining high-/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 092901, 2008 | 200 | 2008 |
| Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee Applied physics letters 80 (7), 1249-1251, 2002 | 200 | 2002 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 191 | 2012 |
| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 094108, 2006 | 190 | 2006 |
| Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ... Advanced Materials 25 (34), 4723-4728, 2013 | 184 | 2013 |
| Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon BH Lee, Y Jeon, K Zawadzki, WJ Qi, J Lee Applied physics letters 74 (21), 3143-3145, 1999 | 180 | 1999 |
| Neuromorphic speech systems using advanced ReRAM-based synapse S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ... 2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013 | 173 | 2013 |
| Fast transient charging at the graphene/ interface causing hysteretic device characteristics YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ... Applied Physics Letters 98 (18), 183508, 2011 | 168 | 2011 |
Rino ChoiProfessor of Materials Science and Eng., Inha Universityinha.ac.kr의 이메일 확인됨
