| Flexible Hybrid Organic–Inorganic Perovskite Memory C Gu, JS Lee ACS nano 10 (5), 5413-5418, 2016 | 537 | 2016 |
| Ferroelectric Analog Synaptic Transistors MK Kim, JS Lee Nano letters 19 (3), 2044-2050, 2019 | 467 | 2019 |
| Flexible organic transistor memory devices SJ Kim, JS Lee Nano letters 10 (8), 2884-2890, 2010 | 420 | 2010 |
| Artificial Synapses with Short-and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials Y Park, JS Lee ACS nano 11 (9), 8962-8969, 2017 | 329 | 2017 |
| Biocompatible and Flexible Chitosan‐Based Resistive Switching Memory with Magnesium Electrodes NR Hosseini, JS Lee Advanced Functional Materials 25 (35), 5586-5592, 2015 | 292 | 2015 |
| Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties JS Lee, J Cho, C Lee, I Kim, J Park, YM Kim, H Shin, J Lee, F Caruso Nature nanotechnology 2 (12), 790-795, 2007 | 280 | 2007 |
| Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics MK Kim, JS Lee ACS nano 12 (2), 1680-1687, 2018 | 233 | 2018 |
| Resistive switching memory based on bioinspired natural solid polymer electrolytes N Raeis Hosseini, JS Lee ACS nano 9 (1), 419-426, 2015 | 197 | 2015 |
| A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials B Hwang, JS Lee Advanced Materials 29 (29), 1701048, 2017 | 164 | 2017 |
| Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers JC Park, S Kim, S Kim, C Kim, I Song, Y Park, U Jung, DH Kim, JS Lee Advanced Materials, 2010 | 164 | 2010 |
| Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices YM Kim, JS Lee Journal of Applied Physics 104 (11), 114115, 2008 | 158 | 2008 |
| Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage B Hwang, JS Lee Nanoscale 10 (18), 8578-8584, 2018 | 154 | 2018 |
| Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors MK Kim, JS Lee Advanced Materials, 1907826, 2020 | 152 | 2020 |
| Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors N Raeis-Hosseini, JS Lee ACS applied materials & interfaces 8 (11), 7326-7332, 2016 | 151 | 2016 |
| Progress in non-volatile memory devices based on nanostructured materials and nanofabrication JS Lee J. Mater. Chem., 2011 | 143 | 2011 |
| Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films CW Jeong, JS Lee, SK Joo Japanese Journal of Applied Physics 40 (1R), 285, 2001 | 141 | 2001 |
| CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory MK Kim, IJ Kim, JS Lee Science Advances 7 (3), eabe1341, 2021 | 140 | 2021 |
| Flexible Artificial Synaptic Devices Based on Collagen from Fish Protein with Spike‐Timing‐Dependent Plasticity N Raeis‐Hosseini, Y Park, JS Lee Advanced Functional Materials 28 (31), 1800553, 2018 | 138 | 2018 |
| Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory B Hwang, C Gu, D Lee, JS Lee Scientific Reports 7, 43794, 2017 | 137 | 2017 |
| Recent progress in gold nanoparticle-based non-volatile memory devices JS Lee Gold Bulletin 43, 189-199, 2010 | 135 | 2010 |
Quanxi JiaUniversity at Buffalo - The State University of New York; Los Alamos National Laboratory (former)Verified email at buffalo.edu
