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Hongping Zhao
Hongping Zhao
Professor of Electrical & Computer Engineering, Materials Science & Engineering, OSU
Verified email at osu.edu - Homepage
Title
Cited by
Cited by
Year
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu
Optics express 19 (104), A991-A1007, 2011
6252011
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 2019
2722019
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
H Zhao, RA Arif, YK Ee, N Tansu
IEEE journal of quantum electronics 45 (1), 66-78, 2008
2532008
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
2522018
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
H Zhao, G Liu, RA Arif, N Tansu
Solid-State Electronics 54 (10), 1119-1124, 2010
2342010
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao
Applied Physics Letters 108 (18), 2016
2252016
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
H Zhao, G Liu, J Zhang, RA Arif, N Tansu
Journal of Display Technology 9 (4), 212-225, 2013
2032013
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
H Zhao, G Liu, N Tansu
Applied Physics Letters 97 (13), 2010
2012010
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
J Zhang, H Zhao, N Tansu
Applied Physics Letters 97 (11), 2010
1962010
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 2009
1892009
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ...
Applied Physics Letters 95 (6), 2009
1882009
III-nitride photonics
N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee
IEEE Photonics Journal 2 (2), 241-248, 2010
1762010
Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes
RA Arif, H Zhao, YK Ee, N Tansu
IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008
1632008
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
H Zhao, RA Arif, N Tansu
IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009
1522009
Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses
YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009
1522009
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 2016
1472016
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 2018
1412018
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
1412018
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
J Zhang, H Zhao, N Tansu
Applied Physics Letters 98 (17), 171111, 2011
1412011
Type-II InGaN-GaNAs quantum wells for lasers applications
RA Arif, H Zhao, N Tansu
Applied Physics Letters 92 (1), 2008
1382008
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