| A review of Ga2O3 materials, processing, and devices SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro Applied Physics Reviews 5 (1), 2018 | 2485 | 2018 |
| Perspective—opportunities and future directions for Ga2O3 MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 6 (5), P356, 2017 | 468 | 2017 |
| Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 285 | 2010 |
| Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor MA Mastro, CR Eddy Jr, S Akbar US Patent 7,928,471, 2011 | 265 | 2011 |
| Film on Graphene on a Substrate and Method and Devices Therefor F Kub, T Anderson, M Mastro US Patent App. 13/310,347, 2012 | 188 | 2012 |
| Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics J Kim, S Oh, MA Mastro, J Kim Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016 | 178 | 2016 |
| Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ... IEEE electron device letters 33 (1), 23-25, 2011 | 160 | 2011 |
| Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ... Journal of Electronic Materials 45, 2031-2037, 2016 | 149 | 2016 |
| III–V compound semiconductors: integration with silicon-based microelectronics T Li, M Mastro, A Dadgar CRC press, 2010 | 149 | 2010 |
| Surface depletion effects in semiconducting nanowires BS Simpkins, MA Mastro, CR Eddy, PE Pehrsson Journal of Applied Physics 103 (10), 2008 | 142 | 2008 |
| Characterizing the tunable refractive index of vanadium dioxide M Currie, MA Mastro, VD Wheeler Optical Materials Express 7 (5), 1697-1707, 2017 | 130 | 2017 |
| Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy, ... Applied Physics Letters 99 (14), 2011 | 130 | 2011 |
| Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton Applied Physics Letters 109 (6), 2016 | 124 | 2016 |
| Development of solar-blind photodetectors based on Si-implanted β-Ga2O3 S Oh, Y Jung, MA Mastro, JK Hite, CR Eddy Jr, J Kim Optics Express 23 (22), 28300-28305, 2015 | 122 | 2015 |
| Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor J Kim, MA Mastro, MJ Tadjer, J Kim ACS applied materials & interfaces 9 (25), 21322-21327, 2017 | 119 | 2017 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 114 | 2014 |
| Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake S Oh, MA Mastro, MJ Tadjer, J Kim ECS Journal of Solid State Science and Technology 6 (8), Q79, 2017 | 109 | 2017 |
| Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics N Nepal, NY Garces, DJ Meyer, JK Hite, MA Mastro, CR Eddy Jr Applied physics express 4 (5), 055802, 2011 | 107 | 2011 |
| Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics J Kim, MA Mastro, MJ Tadjer, J Kim ACS applied materials & interfaces 10 (35), 29724-29729, 2018 | 104 | 2018 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Letters 35 (8), 826-828, 2014 | 94 | 2014 |
