| SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations S Choi, SH Tan, Z Li, Y Kim, C Choi, PY Chen, H Yeon, S Yu, J Kim Nature materials 17 (4), 335-340, 2018 | 479 | 2018 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 208 | 2018 |
| Alloying conducting channels for reliable neuromorphic computing H Yeon, P Lin, C Choi, SH Tan, Y Park, D Lee, J Lee, F Xu, B Gao, H Wu, ... Nature Nanotechnology 15 (7), 574-579, 2020 | 130 | 2020 |
| Graphene as an atomically thin barrier to Cu diffusion into Si J Hong, S Lee, S Lee, H Han, C Mahata, HW Yeon, B Koo, SI Kim, T Nam, ... Nanoscale 6 (13), 7503-7511, 2014 | 103 | 2014 |
| Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor JR Yim, SY Jung, HW Yeon, JY Kwon, YJ Lee, JH Lee, YC Joo Japanese journal of applied physics 51 (1R), 011401, 2011 | 75 | 2011 |
| Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor JR Yim, SY Jung, HW Yeon, JY Kwon, YJ Lee, JH Lee, YC Joo Japanese journal of applied physics 51 (1R), 011401, 2011 | 73 | 2011 |
| Long-term reliable physical health monitoring by sweat pore–inspired perforated electronic skins H Yeon, H Lee, Y Kim, D Lee, Y Lee, JS Lee, J Shin, C Choi, JH Kang, ... Science Advances 7 (27), eabg8459, 2021 | 52 | 2021 |
| Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states HW Yeon, SM Lim, JK Jung, H Yoo, YJ Lee, HY Kang, YJ Park, M Kim, ... NPG Asia Materials 8 (3), e250-e250, 2016 | 29 | 2016 |
| Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays SH Tan, P Lin, H Yeon, S Choi, Y Park, J Kim APL Materials 6 (12), 120901, 2018 | 24 | 2018 |
| Enhanced conductivity of solution-processed indium tin oxide nanoparticle films by oxygen partial pressure controlled annealing NR Kim, JH Lee, YY Lee, DH Nam, HW Yeon, SY Lee, TY Yang, YJ Lee, ... Journal of Materials Chemistry C 1 (37), 5953-5959, 2013 | 24 | 2013 |
| One-step structure modulation of electrospun metal-loaded carbon nanofibers: Redox reaction controlled calcination DH Nam, JH Lee, NR Kim, YY Lee, HW Yeon, SY Lee, YC Joo Carbon 82, 273-281, 2015 | 23 | 2015 |
| Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors Y Kim, JM Suh, J Shin, Y Liu, H Yeon, K Qiao, HS Kum, C Kim, HE Lee, ... Science 377 (6608), 859-864, 2022 | 20 | 2022 |
| Thermally stable amorphous oxide-based Schottky diodes through oxygen vacancy control at metal/oxide interfaces SM Lim, HW Yeon, GB Lee, MG Jin, SY Lee, J Jo, M Kim, YC Joo Scientific reports 9 (1), 7872, 2019 | 13 | 2019 |
| Influences of semiconductor morphology on the mechanical fatigue behavior of flexible organic electronics YJ Lee, Y Uk Lee, HW Yeon, HAS Shin, LA Evans, YC Joo Applied Physics Letters 103 (24), 241904, 2013 | 13 | 2013 |
| Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence C Choi, H Kim, JH Kang, MK Song, H Yeon, CS Chang, JM Suh, J Shin, ... Nature Electronics 5 (6), 386-393, 2022 | 11 | 2022 |
| Improvements of mechanical fatigue reliability of Cu interconnects on flexible substrates through MoTi alloy under-layer YJ Lee, HAS Shin, DH Nam, HW Yeon, B Nam, K Woo, YC Joo Electronic Materials Letters 11, 149-154, 2015 | 8 | 2015 |
| Cu Diffusion‐Driven Dynamic Modulation of the Electrical Properties of Amorphous Oxide Semiconductors HW Yeon, J Jo, H Song, Y Kang, S Na, H Yoo, SY Lee, H Cho, HY Kang, ... Advanced Functional Materials 27 (25), 1700336, 2017 | 7 | 2017 |
| Electromigration behavior of advanced metallization on the structural effects for memory devices KT Jang, YJ Park, MW Jeong, SM Lim, HW Yeon, JY Cho, MG Jin, JS Shin, ... Microelectronic Engineering 156, 97-102, 2016 | 5 | 2016 |
| Cu contamination of the nMOSFET in a 3-D integrated circuit under thermal and electrical stress HW Yeon, SY Jung, J Lim, J Pyun, H Kim, D Baek, YC Joo Electrochemical and Solid-State Letters 15 (5), H157, 2012 | 5 | 2012 |
| Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias YJ Lee, HW Yeon, SY Jung, SK Na, JS Park, YY Choi, HJ Lee, OS Song, ... Electronic Materials Letters 10, 275-279, 2014 | 4 | 2014 |
Scott TanMassachusetts Institute of Technologymit.edu의 이메일 확인됨
