| Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ... Applied Physics Letters 93 (13), 2008 | 658 | 2008 |
| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 2011 | 563 | 2011 |
| Detection of terahertz radiation in gated two-dimensional structures governed by dc current D Veksler, F Teppe, AP Dmitriev, VY Kachorovskii, W Knap, MS Shur Physical Review B—Condensed Matter and Materials Physics 73 (12), 125328, 2006 | 255 | 2006 |
| Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor F Teppe, W Knap, D Veksler, MS Shur, AP Dmitriev, VY Kachorovskii, ... Applied Physics Letters 87 (5), 2005 | 213 | 2005 |
| Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures AV Muravjov, DB Veksler, VV Popov, OV Polischuk, N Pala, X Hu, ... Applied Physics Letters 96 (4), 2010 | 184 | 2010 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 165 | 2010 |
| Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ... Electronics Letters 42 (23), 1342-1344, 2006 | 142 | 2006 |
| Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor F Teppe, D Veksler, VY Kachorovski, AP Dmitriev, X Xie, XC Zhang, ... Applied Physics Letters 87 (2), 2005 | 126 | 2005 |
| Spectroscopic characterization of explosives in the far-infrared region Y Chen, H Liu, Y Deng, DB Veksler, MS Shur, XC Zhang, D Schauki, ... Terahertz for Military and Security Applications II 5411, 1-8, 2004 | 123 | 2004 |
| Random telegraph noise (RTN) in scaled RRAM devices D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ... 2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013 | 99 | 2013 |
| Universal compact model for long-and short-channel thin-film transistors B Iñiguez, R Picos, D Veksler, A Koudymov, MS Shur, T Ytterdal, ... Solid-State Electronics 52 (3), 400-405, 2008 | 95 | 2008 |
| Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs W Stillman, MS Shur, D Veksler, S Rumyantsev, F Guarin Electronics letters 43 (7), 422-423, 2007 | 79 | 2007 |
| Controlling uniformity of RRAM characteristics through the forming process A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012 | 78 | 2012 |
| Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOxRRAM Devices KG Young-Fisher, G Bersuker, B Butcher, A Padovani, L Larcher, ... IEEE electron device letters 34 (6), 750-752, 2013 | 70 | 2013 |
| Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series TA Elkhatib, VY Kachorovskii, WJ Stillman, DB Veksler, KN Salama, ... IEEE transactions on microwave theory and techniques 58 (2), 331-339, 2010 | 66 | 2010 |
| L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ... Applied Physics Letters 104 (16), 2014 | 61 | 2014 |
| Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics D Veksler, G Bersuker, B Chakrabarti, E Vogel, S Deora, K Matthews, ... 2012 International Electron Devices Meeting, 9.6. 1-9.6. 4, 2012 | 60 | 2012 |
| Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs N Pala, F Teppe, D Veksler, Y Deng, MS Shur, R Gaska Electronics Letters 41 (7), 447-449, 2005 | 55 | 2005 |
| Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ... IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013 | 53 | 2013 |
| Silicon FinFETs as detectors of terahertz and sub-terahertz radiation W Stillman, C Donais, S Rumyantsev, M Shur, D Veksler, C Hobbs, ... International Journal of High Speed Electronics and Systems 20 (01), 27-42, 2011 | 48 | 2011 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
