| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3, 638-645, 2020 | 371 | 2020 |
| Tin oxide for optoelectronic, photovoltaic and energy storage devices: a review GK Dalapati, H Sharma, A Guchhait, N Chakrabarty, P Bamola, Q Liu, ... Journal of materials chemistry A 9 (31), 16621-16684, 2021 | 282 | 2021 |
| Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications C Mahata, H Algadi, J Lee, S Kim, T Lee Measurement 151, 107095, 2020 | 141 | 2020 |
| Graphene as an atomically thin barrier to Cu diffusion into Si J Hong, S Lee, S Lee, H Han, C Mahata, HW Yeon, B Koo, SI Kim, T Nam, ... Nanoscale 6 (13), 7503-7511, 2014 | 116 | 2014 |
| Textile-based electronic components for energy applications: Principles, problems, and perspective V Kaushik, J Lee, J Hong, S Lee, S Lee, J Seo, C Mahata, T Lee Nanomaterials 5 (3), 1493-1531, 2015 | 111 | 2015 |
| Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing M Ismail, U Chand, C Mahata, J Nebhen, S Kim Journal of Materials Science & Technology 96, 94-102, 2022 | 101 | 2022 |
| Efficient plastic recycling and remolding circular economy using the technology of trust–blockchain S Khadke, P Gupta, S Rachakunta, C Mahata, S Dawn, M Sharma, ... Sustainability 13 (16), 9142, 2021 | 92 | 2021 |
| Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse M Ismail, C Mahata, S Kim Journal of Alloys and Compounds 892, 162141, 2022 | 90 | 2022 |
| Switchable water-adhesive, superhydrophobic palladium-layered silicon nanowires potentiate the angiogenic efficacy of human stem cell spheroids J Seo, JS Lee, K Lee, D Kim, K Yang, S Shin, C Mahata, HB Jung, W Lee, ... Adv. Mater 26 (41), 7043-7050, 2014 | 82 | 2014 |
| Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application JH Ryu, C Mahata, S Kim Journal of Alloys and Compounds 850, 156675, 2021 | 79 | 2021 |
| Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application MK Rahmani, M Ismail, C Mahata, S Kim Results in Physics 18, 103325, 2020 | 79 | 2020 |
| Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As C Mahata, YC Byun, CH An, S Choi, Y An, H Kim ACS applied materials & interfaces 5 (10), 4195-4201, 2013 | 77 | 2013 |
| Multi-level analog resistive switching characteristics in tri-layer HfO2/Al2O3/HfO2 based memristor on ITO electrode C Mahata, M Kang, S Kim Nanomaterials 10 (10), 2069, 2020 | 75 | 2020 |
| Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ... Journal of Alloys and Compounds 826, 154434, 2020 | 72 | 2020 |
| Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021 | 64 | 2021 |
| Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020 | 63 | 2020 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 63 | 2020 |
| Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering JH Ryu, B Kim, F Hussain, C Mahata, M Ismail, Y Kim, S Kim Applied Surface Science 544, 148796, 2021 | 58 | 2021 |
| Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors BE Park, IK Oh, C Mahata, CW Lee, D Thompson, HBR Lee, WJ Maeng, ... Journal of Alloys and Compounds 722, 307-312, 2017 | 57 | 2017 |
| Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 56 | 2020 |
Sungjun KimDivision of Electronics and Electrical Engineering, Dongguk Universitydongguk.edu의 이메일 확인됨
