Chen Li (李辰)
Chen Li (李辰)
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Atomic layer etching at the tipping point: an overview
GS Oehrlein, D Metzler, C Li
ECS Journal of Solid State Science and Technology 4 (6), N5041, 2015
1702015
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1 …, 2016
662016
Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
C Li, D Metzler, CS Lai, EA Hudson, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (4 …, 2016
582016
Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors
KY Lin, C Li, S Engelmann, RL Bruce, EA Joseph, D Metzler, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (4 …, 2018
282018
Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
D Metzler, C Li, S Engelmann, RL Bruce, EA Joseph, GS Oehrlein
The Journal of chemical physics 146 (5), 052801, 2017
282017
Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
M Kawakami, D Metzler, C Li, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (4 …, 2016
222016
Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate
D Metzler, C Li, CS Lai, EA Hudson, GS Oehrlein
Journal of Physics D: Applied Physics 50 (25), 254006, 2017
202017
Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric
C Li, R Gupta, V Pallem, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (3 …, 2016
102016
Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition
KY Lin, C Li, S Engelmann, RL Bruce, EA Joseph, D Metzler, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (3 …, 2020
72020
Application of cyclic fluorocarbon/argon discharges to device patterning
D Metzler, K Uppireddi, RL Bruce, H Miyazoe, Y Zhu, W Price, ES Sikorski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (1 …, 2016
42016
Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si3N4 and …
C Li, V Godyak, T Hofmann, K Edinger, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (3 …, 2020
32020
Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity
A Pranda, C Li, Y Seo, GS Oehrlein
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (4 …, 2021
2021
Leveraging Precursor Molecular Composition and Structure for Atomic Layer Etching
GS Oehrlein, KY Lin, C Li
US Patent App. 16/390,223, 2020
2020
Achieving etching selectivity for atomic layer etching processes by utilizing material-selective deposition phenomena
GS Oehrlein, KY Lin, C Li
US Patent 10,790,157, 2020
2020
Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment
C Li, T Hofmann, K Edinger, V Godyak, GS Oehrlein
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2020
2020
Ultra-high Si3N4 to SiO2 Selective Etching by Fluorocarbon Based Remote Plasma
C Li, T Hofmann, K Edinger, GS Oehrlein
AVS 64th International Symposium & Exhibition, 2017
2017
Plasma-Based Removal of Native Oxide Layers on Si and SiGe Substrates While Minimizing Surface Residues
C Li, D Metzler, CS Lai, EA Hudson, GS Oehrlein
AVS 63rd International Symposium & Exhibition, 2016
2016
Fluorocarbon Based Atomic Layer Etching of Si3N4 and Selectivity of SiO2 over Si3N4
C Li, D Metzler, CS Lai, EA Hudson, GS Oehrlein, M Danek, A Dulkin
AVS 62nd International Symposium & Exhibition, 2015
2015
Study of Hydrofluorocarbon Precursor Parameters for Plasma Etching of ULK Dielectric
C Li, R Gupta, V Pallem, GS Oehrlein
AVS 61st International Symposium & Exhibition, 2014
2014
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학술자료 1–19