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Bahattin Abay
Bahattin Abay
Verified email at atauni.edu.tr
Title
Cited by
Cited by
Year
Interpreting the nonideal reverse bias CV characteristics and importance of the dependence of Schottky barrier height on applied voltage
A Turut, M Saglam, H Efeoglu, N Yalcin, M Yildirim, B Abay
Physica B: Condensed Matter 205 (1), 41-50, 1995
2061995
Urbach–Martienssen's tails in layered semiconductor GaSe
B Abay, HS Güder, YK Yoğurtçu
Solid state communications 112 (9), 489-494, 1999
901999
Barrier characteristics of gold Schottky contacts on moderately doped n-InP based on temperature dependent I–V and C–V measurements
M Soylu, B Abay
Microelectronic engineering 86 (1), 88-95, 2009
772009
Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements
B Abay, G Çankaya, HS Güder, H Efeoglu, YK Yogurtcu
Semiconductor science and technology 18 (2), 75, 2002
762002
Temperature dependence of the optical energy gap and Urbach–Martienssen’s tail in the absorption spectra of the layered semiconductor Tl2GaInSe4
B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu
Journal of Physics and Chemistry of Solids 62 (4), 747-752, 2001
692001
Temperature dependence of the band-gap energy and sub-band-gap absorption tails in strongly quantized ZnSe nanocrystals deposited as thin films
B Pejova, B Abay, I Bineva
The Journal of Physical Chemistry C 114 (36), 15280-15291, 2010
682010
Analysing space charge-limited conduction in Au/n-InP Schottky diodes
M Soylu, B Abay
Physica E: Low-dimensional Systems and Nanostructures 43 (1), 534-538, 2010
562010
Influence of interface states on the temperature dependence and current–voltage characteristics of Ni/p-InP Schottky diodes
K Ejderha, N Yıldırım, A Türüt, B Abay
Superlattices and Microstructures 47 (2), 241-252, 2010
442010
Photoluminescence characterization of GaTe single crystals
HS Güder, B Abay, H Efeoğlu, YK Yoğurtçu
Journal of luminescence 93 (3), 243-248, 2001
442001
Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts
K Ejderha, N Yıldırım, B Abay, A Turut
Journal of Alloys and Compounds 484 (1-2), 870-876, 2009
412009
Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe
B Abay, HS Güder, H Efeoglu, YK Yogurtçu
Journal of Physics D: Applied Physics 32 (22), 2942, 1999
341999
Copper diffusion in ZnS thin films
E Bacaksız, TD Dzhafarov, VD Novruzov, K Öztürk, M Tomakin, ...
physica status solidi (a) 201 (13), 2948-2952, 2004
332004
Effect of substrate temperature and post‐deposition annealing on the properties of evaporated CdSe thin films
E Bacaksiz, BM Basol, M Altunbaş, S Yılmaz, M Tomakin, B Abay
physica status solidi (b) 244 (2), 497-504, 2007
312007
Current-and capacitance-voltage characteristics of Cd/p-GaTe Schottky barrier diodes under hydrostatic pressure
G Çankaya, B Abay
Semiconductor science and technology 21 (2), 124, 2005
302005
Influence of temperature and phase transitions on the Urbach’s tails of absorption spectra for single crystals
B Abay, HS Güder, H Efeoǧlu, YK Yoǧurtçu
Journal of applied physics 84 (7), 3872-3879, 1998
291998
Urbach‐Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2
B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu
physica status solidi (b) 227 (2), 469-476, 2001
282001
Growth and Optical Properties of Ho Doped n‐Type Indium Selenide
B Gürbulak, M Yildirim, B Abay, S Tüzemen, M Alieva, YK Yoğurtç
physica status solidi (a) 168 (2), 495-500, 1998
271998
Urbach–Martienssen tails in Er-doped and undoped n-type InSe
B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu
Physica B: Condensed Matter 254 (1-2), 148-155, 1998
251998
Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe (: Er) Schottky contacts
B Abay, Y Onganer, M Saǧlam, H Efeoǧlu, A Türüt, YK Yoǧurtçu
Microelectronic Engineering 51, 689-693, 2000
242000
Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors
B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtcu
Journal of electronic materials 25, 1054-1059, 1996
241996
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