| Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process K Lai, AE Rosenbluth, S Bagheri, J Hoffnagle, K Tian, D Melville, ... Optical Microlithography XXII 7274, 82-93, 2009 | 70 | 2009 |
| Intensive optimization of masks and sources for 22nm lithography AE Rosenbluth, DO Melville, K Tian, S Bagheri, J Tirapu-Azpiroz, K Lai, ... Optical Microlithography XXII 7274, 67-81, 2009 | 66 | 2009 |
| Sonic cleaning with an interference signal EE Fisch, GW Gale, HF Okorn-Schmidt, WA Syverson US Patent 6,276,370, 2001 | 60 | 2001 |
| Reducing edge die reflectivity in extreme ultraviolet lithography EE Gallagher, GR McIntyre US Patent 8,765,331, 2014 | 52 | 2014 |
| Structure and method for fixing phase effects on EUV mask M Burkhardt, EEF Gallagher US Patent 9,551,924, 2017 | 42 | 2017 |
| Insertion strategy for EUV lithography O Wood, J Arnold, T Brunner, M Burkhardt, JHC Chen, D Civay, SSC Fan, ... Extreme Ultraviolet (EUV) Lithography III 8322, 32-39, 2012 | 40 | 2012 |
| SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform J Bekaert, P Di Lorenzo, M Mao, S Decoster, S Larivière, JH Franke, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 73-87, 2017 | 34 | 2017 |
| Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations D Melville, AE Rosenbluth, K Tian, K Lai, S Bagheri, J Tirapu-Azpiroz, ... Optical Microlithography XXIII 7640, 51-68, 2010 | 34 | 2010 |
| Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication T Faure, E Gallagher, M Hibbs, L Kindt, K Racette, R Wistrom, A Zweber, ... Photomask Technology 2008 7122, 67-78, 2008 | 30 | 2008 |
| Inspection of EUV reticles DW Pettibone, A Veldman, T Liang, AR Stivers, PJS Mangat, B Lu, ... Emerging Lithographic Technologies VI 4688, 363-374, 2002 | 29 | 2002 |
| Assist features: placement, impact, and relevance for EUV imaging I Mochi, V Philipsen, E Gallagher, E Hendrickx, K Lyakhova, F Wittebrood, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 513-529, 2016 | 28 | 2016 |
| Operation of the sapphire Cerenkov laser EE Fisch, JE Walsh Applied physics letters 60 (11), 1298-1300, 1992 | 28 | 1992 |
| Structure for lithographic focus control features JA Bruce, O Bula, EE Fisch US Patent 6,577,406, 2003 | 26 | 2003 |
| EUV lithography imaging using novel pellicle membranes I Pollentier, J Vanpaemel, JU Lee, C Adelmann, H Zahedmanesh, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 587-600, 2016 | 25 | 2016 |
| Free-standing carbon nanotube films for extreme ultraviolet pellicle application MY Timmermans, M Mariano, I Pollentier, O Richard, C Huyghebaert, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 17 (4), 043504-043504, 2018 | 24 | 2018 |
| Novel membrane solutions for the EUV pellicle: better or not? I Pollentier, JU Lee, M Timmermans, C Adelmann, H Zahedmanesh, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 125-134, 2017 | 23 | 2017 |
| Properties and performance of EUVL pellicle membranes EE Gallagher, J Vanpaemel, I Pollentier, H Zahedmanesh, C Adelmann, ... Photomask Technology 2015 9635, 206-213, 2015 | 23 | 2015 |
| Structure and method for detection of physical interference during transport of an article AW Ballantine, EE Fisch, RA Warren US Patent 6,282,459, 2001 | 23 | 2001 |
| Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform VMB Carballo, J Bekaert, M Mao, BK Kotowska, S Larivière, I Ciofi, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 241-250, 2017 | 21 | 2017 |
| Impact of EUV photomask line-edge roughness on wafer prints ZJ Qi, E Gallagher, Y Negishi, G McIntyre, A Zweber, T Senna, ... Photomask Technology 2012 8522, 666-673, 2012 | 21 | 2012 |
Marina Y. Timmermans (Zavodchikova)imec, Belgiumimec.be의 이메일 확인됨
