Epitaxial brownmillerite oxide thin films for reliable switching memory SK Acharya, RV Nallagatla, O Togibasa, BW Lee, C Liu, CU Jung, ... ACS Applied Materials & Interfaces 8 (12), 7902-7911, 2016 | 83 | 2016 |
Topotactic phase transition driving memristive behavior VR Nallagatla, T Heisig, C Baeumer, V Feyer, M Jugovac, G Zamborlini, ... Advanced materials 31 (40), 1903391, 2019 | 73 | 2019 |
Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory SK Acharya, J Jo, NV Raveendra, U Dash, M Kim, H Baik, S Lee, BH Park, ... Nanoscale 9 (29), 10502-10510, 2017 | 44 | 2017 |
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels VR Nallagatla, J Kim, K Lee, SC Chae, CS Hwang, CU Jung ACS Applied Materials & Interfaces 12 (37), 41740-41748, 2020 | 43 | 2020 |
Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device VR Nallagatla, J Jo, SK Acharya, M Kim, CU Jung Scientific Reports 9 (1), 1188, 2019 | 28 | 2019 |
In situ observations of topotactic phase transitions in a ferrite memristor HG Kim, VR Nallagatla, DH Kwon, CU Jung, M Kim Journal of Applied Physics 128 (7), 2020 | 17 | 2020 |
Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites J Jo, VR Nallagatlla, SK Acharya, Y Kang, Y Kim, S Yoon, S Lee, H Baik, ... Scientific reports 10 (1), 3807, 2020 | 17 | 2020 |
Resistive switching behavior in epitaxial brownmillerite SrFeO2. 5/Nb: SrTiO3 heterojunction VR Nallagatla, CU Jung Applied Physics Letters 117 (14), 2020 | 16 | 2020 |
A rigorous investigation of BiMnO3 ferroelectricity through a development of a novel way to stabilize twin free and monoclinic thin film U Dash, NV Raveendra, CU Jung Journal of Alloys and Compounds 684, 310-314, 2016 | 12 | 2016 |
Variable resistor, non-volatile memory element using the same, and method of fabricating the same CU Jung, SK Acharya, VR Nallagatla, BW Lee, C Liu US Patent 10,886,466, 2021 | 6 | 2021 |
Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements F Kurnia, C Liu, N Raveendra, CU Jung, RK Vasudevan, N Valanoor Advanced Electronic Materials 6 (5), 1901153, 2020 | 6 | 2020 |
Enhanced resistive switching properties of HfAlOx/ZrO2-based RRAM devices PRS Reddy, VR Nallagatla, YA Kumar, G Murali Progress in Natural Science: Materials International 32 (5), 602-607, 2022 | 4 | 2022 |
Significant error in significant figures? CU Jung, VR Nallagatla Journal of the Korean Physical Society 78 (2), 89-92, 2021 | 2 | 2021 |
Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices VR Nallagatla, H Sasindra, HG Kim, D Yoo, GC Yi, M Kim, CU Jung Advanced Electronic Materials 9 (11), 2300401, 2023 | 1 | 2023 |
Understanding the Behavior of Oxygen Vacancies in an SrFeOx/Nb: SrTiO3 Memristor HG Kim, VR Nallagatla, CU Jung, GS Park, DH Kwon, M Kim Electronic Materials Letters 18 (2), 168-175, 2022 | 1 | 2022 |
Enhanced remnant polarization in ferroelectric Hf0. 5Zr0. 5O2 thin film capacitors through Mo top electrode by post-metallization annealing treatment PRS Reddy, VR Nallagatla, A Sreedhar Physica B: Condensed Matter, 416024, 2024 | | 2024 |
Electronic Transport and Resistive Switching Properties in Topotactic SrFe1–xCoxO2.5 Devices H Sasindrababu, VR Nallagatla, DD Le, B Song, HS Park, JW Cho, ... ACS Applied Electronic Materials, 2024 | | 2024 |
Ferromagnetic ReRAM in Sr(Fe,Co)Ox VR Nallagatla, S Harisankar, CU Jung 한국자기학회 학술연구발표회 논문개요집 31 (2), 80-81, 2021 | | 2021 |
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO₂. ₅ Thin Film through Oriented Oxygen-Vacancy Channels VR Nallagatla, J Kim, K Lee, SC Chae, CS Hwang, CU Jung | | 2020 |
SrFeOx: discovery of ReRAM and spectroscopic study on its unique switching mechanism VR Nallagatla, U Dash, CU Jung 한국자기학회 학술연구발표회 논문개요집 29 (2), 84-85, 2019 | | 2019 |