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Shengli Zhang
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CsPbX3 Quantum Dots for Lighting and Displays: Room‐Temperature Synthesis, Photoluminescence Superiorities, Underlying Origins and White Light‐Emitting …
X Li, Y Wu, S Zhang, B Cai, Y Gu, J Song, H Zeng
Advanced Functional Materials 26 (15), 2435-2445, 2016
21782016
Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions
S Zhang, Z Yan, Y Li, Z Chen, H Zeng
Angewandte Chemie 54, 3112-3115, 2015
15422015
Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities
S Zhang, M Xie, F Li, Z Yan, Y Li, E Kan, W Liu, Z Chen, H Zeng
Angewandte Chemie 128 (5), 1698-1701, 2016
9562016
Two-dimensional antimonene single crystals grown by van der Waals epitaxy
J Ji, X Song, J Liu, Z Yan, C Huo, S Zhang, M Su, L Liao, W Wang, Z Ni, ...
Nature communications 7 (1), 13352, 2016
8412016
Recent progress in 2D group-VA semiconductors: from theory to experiment
S Zhang, S Guo, Z Chen, Y Wang, H Gao, J Gómez-Herrero, P Ares, ...
Chemical Society Reviews 47 (3), 982-1021, 2018
7282018
Engineering surface states of carbon dots to achieve controllable luminescence for solid-luminescent composites and sensitive Be2+ detection
X Li, S Zhang, SA Kulinich, Y Liu, H Zeng
Scientific reports 4 (1), 4976, 2014
6912014
Tackling the Activity and Selectivity Challenges of Electrocatalysts toward the Nitrogen Reduction Reaction via Atomically Dispersed Biatom Catalysts
X Guo, J Gu, S Lin, S Zhang, Z Chen, S Huang
Journal of the American Chemical Society 142 (12), 5709-5721, 2020
5912020
CsPbBr3 Quantum Dots 2.0: Benzenesulfonic Acid Equivalent Ligand Awakens Complete Purification
D Yang, X Li, W Zhou, S Zhang, C Meng, Y Wu, Y Wang, H Zeng
Advanced Materials 31 (30), 1900767, 2019
3202019
2D V‐V Binary Materials: Status and Challenges
S Guo, Y Zhang, Y Ge, S Zhang, H Zeng, H Zhang
Advanced Materials 31 (39), 1902352, 2019
3152019
Simultaneously Achieving High Activity and Selectivity toward Two-Electron O2 Electroreduction: The Power of Single-Atom Catalysts
X Guo, S Lin, J Gu, S Zhang, Z Chen, S Huang
Acs Catalysis 9 (12), 11042-11054, 2019
2832019
Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator
S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng
Nano Letters 17 (6), 3434–3440, 2017
2772017
Black phosphorene as a hole extraction layer boosting solar water splitting of oxygen evolution catalysts
K Zhang, B Jin, C Park, Y Cho, X Song, X Shi, S Zhang, W Kim, H Zeng, ...
Nature communications 10 (1), 2001, 2019
2332019
Nonlinear Saturable Absorption of Liquid‐Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets
D Mao, B Du, D Yang, S Zhang, Y Wang, W Zhang, X She, H Cheng, ...
Small 12 (11), 1489-1497, 2016
2222016
2D Fe-containing cobalt phosphide/cobalt oxide lateral heterostructure with enhanced activity for oxygen evolution reaction
X Hu, S Zhang, J Sun, L Yu, X Qian, R Hu, Y Wang, H Zhao, J Zhu
Nano Energy 56, 109-117, 2019
2182019
A promising two-dimensional solar cell donor: Black arsenic–phosphorus monolayer with 1.54 eV direct bandgap and mobility exceeding 14,000 cm 2 V −1 s −1
Meiqiu Xie a,1 , Shengli Zhang a,1 , Bo Cai a, 1 , Yong Huang a , Yousheng ...
Nano Energy 28, 433-439, 2016
2122016
Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation
X Song, X Liu, D Yu, C Huo, J Ji, X Li, S Zhang, Y Zou, G Zhu, Y Wang, ...
ACS applied materials & interfaces 10 (3), 2801-2809, 2018
2092018
WS2 saturable absorber for dissipative soliton mode locking at 1.06 and 1.55 µm
D Mao, S Zhang, Y Wang, X Gan, W Zhang, T Mei, Y Wang, Y Wang, ...
Optics Express 23 (21), 27509-27519, 2015
1982015
Few-layer antimonene: Anisotropic expansion and reversible crystalline-phase evolution enable large-capacity and long-life Na-ion batteries
W Tian, S Zhang, C Huo, D Zhu, Q Li, L Wang, X Ren, L Xie, S Guo, ...
ACS nano 12 (2), 1887-1893, 2018
1832018
Hydrogenated arsenenes as planar magnet and Dirac material
S Zhang, Y Hu, Z Hu, B Cai, H Zeng
Applied Physics Letters 107 (2), 2015
1732015
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
Y Hu, S Zhang, S Sun, M Xie, B Cai, H Zeng
Applied Physics Letters 107 (12), 2015
1722015
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