Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi Applied Physics Letters 100 (1), 2012 | 1860 | 2012 |
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1260 | 2018 |
Recent progress in Ga2O3 power devices M Higashiwaki, K Sasaki, H Murakami, Y Kumagai, A Koukitu, A Kuramata, ... Semiconductor Science and Technology 31 (3), 034001, 2016 | 1067 | 2016 |
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics M Higashiwaki, K Sasaki, T Kamimura, M Hoi Wong, D Krishnamurthy, ... Applied Physics Letters 103 (12), 2013 | 754 | 2013 |
Guest Editorial: The dawn of gallium oxide microelectronics M Higashiwaki, GH Jessen Applied Physics Letters 112 (6), 2018 | 646 | 2018 |
Development of gallium oxide power devices M Higashiwaki, K Sasaki, A Kuramata, T Masui, S Yamakoshi physica status solidi (a) 211 (1), 21-26, 2014 | 581 | 2014 |
Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V MH Wong, K Sasaki, A Kuramata, S Yamakoshi, M Higashiwaki IEEE Electron Device Letters 37 (2), 212-215, 2015 | 558 | 2015 |
1-kV vertical Ga2O3 field-plated Schottky barrier diodes K Konishi, K Goto, H Murakami, Y Kumagai, A Kuramata, S Yamakoshi, ... Applied Physics Letters 110 (10), 2017 | 553 | 2017 |
Anisotropic thermal conductivity in single crystal β-gallium oxide Z Guo, A Verma, X Wu, F Sun, A Hickman, T Masui, A Kuramata, ... Applied Physics Letters 106 (11), 2015 | 503 | 2015 |
Schottky Barrier Diodes Fabricated by Using Single-Crystal – (010) Substrates K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi IEEE electron device letters 34 (4), 493-495, 2013 | 435 | 2013 |
Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy H Murakami, K Nomura, K Goto, K Sasaki, K Kawara, QT Thieu, ... Applied Physics Express 8 (1), 015503, 2014 | 423 | 2014 |
Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals T Onuma, S Fujioka, T Yamaguchi, M Higashiwaki, K Sasaki, T Masui, ... Applied Physics Letters 103 (4), 2013 | 379 | 2013 |
Si-ion implantation doping in β-Ga2O3 and its application to fabrication of low-resistance ohmic contacts K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi Applied Physics Express 6 (8), 086502, 2013 | 371 | 2013 |
MBE grown Ga2O3 and its power device applications K Sasaki, M Higashiwaki, A Kuramata, T Masui, S Yamakoshi Journal of Crystal Growth 378, 591-595, 2013 | 346 | 2013 |
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide … M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ... Applied Physics Letters 108 (13), 2016 | 342 | 2016 |
Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy T Onuma, S Saito, K Sasaki, T Masui, T Yamaguchi, T Honda, ... Japanese Journal of Applied Physics 54 (11), 112601, 2015 | 340 | 2015 |
State-of-the-art technologies of gallium oxide power devices M Higashiwaki, A Kuramata, H Murakami, Y Kumagai Journal of Physics D: Applied Physics 50 (33), 333002, 2017 | 303 | 2017 |
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 286 | 2022 |
Current status of Ga2O3 power devices M Higashiwaki, H Murakami, Y Kumagai, A Kuramata Japanese Journal of Applied Physics 55 (12), 1202A1, 2016 | 255 | 2016 |
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions T Kamimura, K Sasaki, M Hoi Wong, D Krishnamurthy, A Kuramata, ... Applied Physics Letters 104 (19), 2014 | 233 | 2014 |