| High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, JH Park, C Hwang, ... Scientific reports 5 (1), 10699, 2015 | 355 | 2015 |
| Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance HMW Khalil, MF Khan, J Eom, H Noh ACS applied materials & interfaces 7 (42), 23589-23596, 2015 | 172 | 2015 |
| Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method S Hussain, J Singh, D Vikraman, AK Singh, MZ Iqbal, MF Khan, P Kumar, ... Scientific reports 6 (1), 30791, 2016 | 163 | 2016 |
| Synthesis and characterization of large-area and continuous MoS 2 atomic layers by RF magnetron sputtering S Hussain, MA Shehzad, D Vikraman, MF Khan, J Singh, DC Choi, Y Seo, ... Nanoscale 8 (7), 4340-4347, 2016 | 101 | 2016 |
| n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration A Rehman, MF Khan, MA Shehzad, S Hussain, MF Bhopal, SH Lee, ... ACS applied materials & interfaces 8 (43), 29383-29390, 2016 | 91 | 2016 |
| Synthesis, properties and novel electrocatalytic applications of the 2D-borophene Xenes K Khan, AK Tareen, M Aslam, MF Khan, Z Shi, C Ma, SS Shams, ... Progress in Solid State Chemistry 59, 100283, 2020 | 90 | 2020 |
| Room temperature spin valve effect in NiFe/WS2/Co junctions MZ Iqbal, MW Iqbal, S Siddique, MF Khan, SM Ramay Scientific reports 6 (1), 21038, 2016 | 80 | 2016 |
| Deep-ultraviolet-light-driven reversible doping of WS 2 field-effect transistors MW Iqbal, MZ Iqbal, MF Khan, MA Shehzad, Y Seo, J Eom Nanoscale 7 (2), 747-757, 2015 | 73 | 2015 |
| Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode G Dastgeer, MF Khan, G Nazir, AM Afzal, S Aftab, BA Naqvi, J Cha, ... ACS applied materials & interfaces 10 (15), 13150-13157, 2018 | 72 | 2018 |
| Ultimate limit in size and performance of WSe2 vertical diodes G Nazir, H Kim, J Kim, KS Kim, DH Shin, MF Khan, DS Lee, JY Hwang, ... Nature communications 9 (1), 5371, 2018 | 69 | 2018 |
| Improving the electrical properties of graphene layers by chemical doping MWIJE Muhammad Farooq Khan, Muhammad Zahir Iqbal Science and Technology of Advanced Materials 15, 2014 | 69 | 2014 |
| Enhanced photoresponse of ZnO quantum dot-decorated MoS 2 thin films G Nazir, MF Khan, I Akhtar, K Akbar, P Gautam, H Noh, Y Seo, SH Chun, ... RSC advances 7 (27), 16890-16900, 2017 | 67 | 2017 |
| Thickness-dependent efficiency of directly grown graphene based solar cells MA Rehman, SB Roy, I Akhtar, MF Bhopal, W Choi, G Nazir, MF Khan, ... Carbon 148, 187-195, 2019 | 64 | 2019 |
| Thickness-dependent resistive switching in black phosphorus CBRAM S Rehman, MF Khan, S Aftab, H Kim, J Eom, D Kim Journal of Materials Chemistry C 7 (3), 725-732, 2019 | 60 | 2019 |
| Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware M Kim, MA Rehman, D Lee, Y Wang, DH Lim, MF Khan, H Choi, QY Shao, ... ACS applied materials & interfaces 14 (39), 44561-44571, 2022 | 58 | 2022 |
| MoTe 2 van der Waals homojunction p–n diode with low resistance metal contacts S Aftab, MF Khan, P Gautam, H Noh, J Eom Nanoscale 11 (19), 9518-9525, 2019 | 58 | 2019 |
| Photocurrent Response of MoS2 Field-Effect Transistor by Deep Ultraviolet Light in Atmospheric and N2 Gas Environments MF Khan, MW Iqbal, MZ Iqbal, MA Shehzad, Y Seo, J Eom ACS Applied Materials & Interfaces 6 (23), 21645-21651, 2014 | 52 | 2014 |
| Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates G Nazir, MA Rehman, MF Khan, G Dastgeer, S Aftab, AM Afzal, Y Seo, ... ACS applied materials & interfaces 10 (38), 32501-32509, 2018 | 51 | 2018 |
| Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions MF Khan Science andTechnology of Advanced Materials, 2016 | 49 | 2016 |
| Tailoring the electrical and photo-electrical properties of a WS 2 field effect transistor by selective n-type chemical doping MW Iqbal, MZ Iqbal, MF Khan, MA Kamran, A Majid, T Alharbi, J Eom RSC Advances 6 (29), 24675-24682, 2016 | 49 | 2016 |
Shania RehmanSejong University Seoul, South KoreaVerified email at sejong.ac.kr
