Guowang Li
Guowang Li
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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 2011
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ...
IEEE electron device letters 32 (7), 892-894, 2011
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs
R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 2015
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 2017
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied physics letters 104 (19), 2014
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
Y Cao, K Wang, G Li, T Kosel, H Xing, D Jena
Journal of crystal growth 323 (1), 529-533, 2011
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
F Afroz Faria, J Guo, P Zhao, G Li, P Kumar Kandaswamy, M Wistey, ...
Applied Physics Letters 101 (3), 2012
Threshold Voltage Control in HEMTs by Work-Function Engineering
G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE electron device letters 31 (9), 954-956, 2010
Quantum transport in graphene nanoribbons patterned by metal masks
C Lian, K Tahy, T Fang, G Li, HG Xing, D Jena
Applied Physics Letters 96 (10), 2010
Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
O Laboutin, Y Cao, W Johnson, R Wang, G Li, D Jena, H Xing
Applied Physics Letters 100 (12), 2012
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ...
physica status solidi (a) 208 (7), 1617-1619, 2011
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