Jai Verma
Jai Verma
System Validation Engineer, Intel Corporation
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Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied Physics Letters 99 (19), 193504-193504-3, 2011
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05< formula formulatype=
J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
Electron Device Letters, IEEE 33 (4), 525-527, 2012
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ...
Applied Physics Letters 110 (4), 041108, 2017
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, AK Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures
J Verma, SM Islam, V Protasenko, PK Kandaswamy, HG Xing, D Jena
Applied Physics Letters 104 (2), 021105, 2014
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
Electron Device Letters, IEEE 32 (9), 1215-1217, 2011
N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping
J Verma, J Simon, V Protasenko, T Kosel, H Grace Xing, D Jena
Applied Physics Letters 99 (17), 171104-171104-3, 2011
Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes
J Verma, PK Kandaswamy, V Protasenko, A Verma, H Grace Xing, D Jena
Applied Physics Letters 102 (4), 041103-041103-4, 2013
Localized Surface Phonon Polariton Resonances in Polar Gallium Nitride
K Feng, W Streyer, SM Islam, J Verma, D Jena, D Wasserman, ...
Applied Physics Letters 107, 081108, 2015
Donor− Acceptor 9-Uncapped Fluorenes and Fluorenones as Stable Blue Light Emitters†,‡
A Goel, S Chaurasia, M Dixit, V Kumar, S Prakash, B Jena, JK Verma, ...
Organic Letters 11 (6), 1289-1292, 2009
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107, 232101, 2015
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied Physics Letters 104 (19), 193506, 2014
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
KD Goodman, VV Protasenko, J Verma, TH Kosel, HG Xing, D Jena
Journal of Applied Physics 109 (8), 084336-084336-10, 2011
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes
C Liu, YK Ooi, SM Islam, J Verma, HG Xing, D Jena, J Zhang
Applied Physics Letters 110 (7), 071103, 2017
Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts
G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
Electron Device Letters, IEEE 33 (5), 661-663, 2012
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_ {\ text {T}}/f_ {\ text {max}} of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503-016503-3, 2013
InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz
R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 6503, 2013
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ...
physica status solidi (a) 208 (7), 1617-1619, 2011
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