| Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 242901, 2017 | 263 | 2017 |
| Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, CD Young, L Colombo, ... Applied Physics Letters 112 (17), 172902, 2018 | 133 | 2018 |
| Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors SJ Kim, J Mohan, HS Kim, J Lee, CD Young, L Colombo, SR Summerfelt, ... Applied Physics Letters 113 (18), 182903, 2018 | 60 | 2018 |
| Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices L Cheng, J Lee, H Zhu, AV Ravichandran, Q Wang, AT Lucero, MJ Kim, ... ACS nano 11 (10), 10243-10252, 2017 | 46 | 2017 |
| Stress-induced crystallization of thin Hf1-XZrXO2 films: The origin of enhanced energy density with minimized energy loss for lead-free electrostatic energy storage applications SJ Kim, J Mohan, J Lee, HS Kim, J Lee, CD Young, L Colombo, ... ACS applied materials & interfaces, 2019 | 32 | 2019 |
| Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD X Meng, J Lee, A Ravichandran, YC Byun, JG Lee, AT Lucero, SJ Kim, ... IEEE Electron Device Letters 39 (8), 1195-1198, 2018 | 13 | 2018 |
| Low Temperature (400° c) Ferroelectric Hf0. 5Zr0. 5O2 Capacitors for Next-Generation FRAM Applications SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, CD Young, J Kim, ... Memory Workshop (IMW), 2017 IEEE International, 1-4, 2017 | 13 | 2017 |
