| Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation NT Duong, J Lee, S Bang, C Park, SC Lim, MS Jeong ACS nano 13 (4), 4478-4485, 2019 | 88 | 2019 |
| Modulation of Junction Modes in SnSe2/MoTe2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices J Lee, NT Duong, S Bang, C Park, DA Nguyen, H Jeon, J Jang, HM Oh, ... Nano letters 20 (4), 2370-2377, 2020 | 80 | 2020 |
| Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device DA Nguyen, DY Park, J Lee, NT Duong, C Park, DH Nguyen, TS Le, ... Nano Energy 86, 106049, 2021 | 28 | 2021 |
| Parameter control for enhanced peak-to-valley current ratio in a MoS 2/MoTe 2 van der Waals heterostructure NT Duong, S Bang, SM Lee, DX Dang, DH Kuem, J Lee, MS Jeong, ... Nanoscale 10 (26), 12322-12329, 2018 | 25 | 2018 |
| Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor NT Duong, C Park, DH Nguyen, PH Nguyen, TU Tran, DY Park, J Lee, ... Nano Today 40, 101263, 2021 | 20 | 2021 |
| Gate tunable photoresponse of a two-dimensional pn junction for high performance broadband photodetector TU Tran, DA Nguyen, NT Duong, DY Park, DH Nguyen, PH Nguyen, ... Applied Materials Today 26, 101285, 2022 | 16 | 2022 |
| Encapsulation of a Monolayer WSe2 Phototransistor with Hydrothermally Grown ZnO Nanorods KN Lee, S Bang, NT Duong, SJ Yun, DY Park, J Lee, YC Choi, MS Jeong ACS applied materials & interfaces 11 (22), 20257-20264, 2019 | 16 | 2019 |
| Quasi-2D halide perovskite memory device formed by acid–base binary ligand solution composed of oleylamine and oleic acid HJ Jeong, C Park, H Jeon, KN Lee, J Lee, SC Lim, G Namkoong, ... ACS Applied Materials & Interfaces 13 (34), 40891-40900, 2021 | 13 | 2021 |
| Correlation of Defect-Induced Photoluminescence and Raman Scattering in Monolayer WS2 BG Jeong, C Lee, SH Kim, SJ Yun, DH Kim, J Lee, D Lee, KK Kim, SC Lim, ... The Journal of Physical Chemistry C 126 (16), 7177-7183, 2022 | 11 | 2022 |
| Work-function engineering of source-overlapped dual-gate tunnel field-effect transistor JC Lee, TJ Ahn, YS Yu Journal of Nanoscience and Nanotechnology 18 (9), 5925-5931, 2018 | 9 | 2018 |
| Carrier transport through near-ideal interface for WSe2 van der Waals homojunction diode J Lee, NT Duong, DY Park, CH Park, BG Jeong, MS Jeong Applied Surface Science 542, 148499, 2021 | 4 | 2021 |
| Crossover between thermo-and field-assisted carrier injection in staggered pn heterojunction of MoTe2 and ReS2 C Park, J Lee, MJ Kim, NT Duong, MS Jeong, SC Lim Applied Surface Science 558, 149870, 2021 | 2 | 2021 |
| Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly (vinylpyrrolidone) J Lee, S Bang, HJ Park, DY Park, C Park, NT Duong, YS Won, J Jang, ... ACS Applied Materials & Interfaces 13 (46), 55489-55497, 2021 | 1 | 2021 |
| Carrier Transfer Mechanism in Few-layer ReS₂/MoTe₂ Heterostructure C Park, J Lee, S Bang, NT Duong, IC Choi, SC Lim, MS Jeong 한국진공학회 학술발표회초록집, 131-131, 2019 | | 2019 |
Munseok JeongDepartment of Physics, Hanyang Universityhanyang.ac.kr의 이메일 확인됨
