Cheol Seong Hwang

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Hyeong Joon Kim Professor, School of Materials Science and Engineering, College of Engineering, Seoul National UniversityVerified email at snu.ac.kr
Seong Keun KimKorea Institute of Science and TechnologyVerified email at kist.re.kr
Kyung Min KimAssociate Professor, Department of Materials Science and Engineering, KAISTVerified email at kaist.ac.kr
Min Hyuk ParkSeoul National UniversityVerified email at snu.ac.kr
Gun Hwan KimPh.D, Korea Research Institute of Chemical TechnologyVerified email at krict.re.kr
Doo Seok JeongHanyang UniversityVerified email at hanyang.ac.kr
Byung Joon ChoiSeoul National University of Science and TechnologyVerified email at seoultech.ac.kr
Tae Joo ParkHanyang UniversityVerified email at hanyang.ac.kr
Han Joon KimSeoul National UniversityVerified email at snu.ac.kr
Jung Ho YoonSenior Researcher at Korea Institute of Science and TechnologyVerified email at kist.re.kr
Jeong Hwan HanSeoul National University of Science and Technology (SEOULTECH)Verified email at seoultech.ac.kr
Kyung Jean YoonIntel Santa ClaraVerified email at intel.com
Woongkyu LeeMyongji UniversityVerified email at mju.ac.kr
Min Hwan LeeAssociate Professor, Department of Mechanical Engineering, University of California, MercedVerified email at ucmerced.edu
Jung-Hae ChoiPrincipal Research Scientist, Korea Institute of Science and TechnologyVerified email at kist.re.kr
Seungwu HanSeoul National UniversityVerified email at snu.ac.kr
Young Hwan LeeSeoul National UniversityVerified email at snu.ac.kr
Woojin JeonKyung Hee UniversityVerified email at khu.ac.kr
Chang Seok KangSenior Director, Applied MaterialsVerified email at amat.com
Deok-Yong ChoJeonbuk National UniversityVerified email at jbnu.ac.kr

Cheol Seong Hwang

Professor, Department of Materials Science and Engineering, Seoul National University

Verified email at snu.ac.kr - Homepage

Materials Science Semiconductor Devices Thin film Fabrication


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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010	2120	2010
Resistive switching mechanism of thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 033715, 2005	1345	2005
Multifunctional wearable devices for diagnosis and therapy of movement disorders D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ... Nature nanotechnology 9 (5), 397-404, 2014	1240	2014
Emerging memories: resistive switching mechanisms and current status DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ... Reports on progress in physics 75 (7), 076502, 2012	1018	2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	682	2015
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011	676	2011
Anode-interface localized filamentary mechanism in resistive switching of thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 012907, 2007	469	2007
Evolution of phases and ferroelectric properties of thin Hf_0.5Zr_0.5O₂ films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 242905, 2013	460	2013
A Resistive Memory in Semiconducting BiFeO₃ Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ... Advanced Materials 23 (10), 1277-1281, 2011	405	2011
Identification of a determining parameter for resistive switching of thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 262907, 2005	387	2005
High dielectric constant thin films on a Ru electrode grown at 250 °C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied Physics Letters 85 (18), 4112-4114, 2004	370	2004
Deposition of extremely thin (Ba,Sr)TiO₃ thin films for ultra‐large‐scale integrated dynamic random access memory application CS Hwang, SO Park, HJ Cho, CS Kang, HK Kang, SI Lee, MY Lee Applied physics letters 67 (19), 2819-2821, 1995	335	1995
Resistive switching materials for information processing Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang Nature Reviews Materials 5 (3), 173-195, 2020	315	2020
Al‐Doped TiO₂ Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ... Advanced Materials 20 (8), 1429-1435, 2008	312	2008
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014	309	2014
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ... Applied Physics Letters 98 (10), 103509, 2011	282	2011
First-principles study on doping and phase stability of HfO 2 CK Lee, E Cho, HS Lee, CS Hwang, S Han Physical Review B 78 (1), 012102, 2008	275	2008
Localized switching mechanism in resistive switching of atomic-layer-deposited thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 242906, 2007	261	2007
First-principles study of point defects in rutile Ti O 2− x E Cho, S Han, HS Ahn, KR Lee, SK Kim, CS Hwang Physical Review B 73 (19), 193202, 2006	260	2006
Thin Hf_xZr_1‐xO₂ Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang Advanced Energy Materials 4 (16), 1400610, 2014	257	2014

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