Chandan Samantaray Ph.D.
Chandan Samantaray Ph.D.
Department of Engineering, Virginia State University, VA, USA
Verified email at vsu.edu - Homepage
Title
Cited by
Cited by
Year
Review of synthesis and properties of cubic boron nitride (c-BN) thin films
CB Samantaray, RN Singh
International Materials Reviews 50 (6), 313-344, 2005
1092005
Electronic structure and optical properties of barium strontium titanate (BaxSr1− xTiO3) using first-principles method
CB Samantaray, H Sim, H Hwang
Physica B: Condensed Matter 351 (1-2), 158-162, 2004
752004
The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations
CB Samantaray, H Sim, H Hwang
Microelectronics journal 36 (8), 725-728, 2005
722005
Photoluminescence properties of Eu3+-doped barium strontium titanate (Ba, Sr) TiO3 ceramics
CB Samantaray, MLN Goswami, D Bhattacharya, SK Ray, HN Acharya
Materials letters 58 (17-18), 2299-2301, 2004
612004
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5
H Sim, D Choi, D Lee, M Hasan, CB Samantaray, H Hwang
Microelectronic engineering 80, 260-263, 2005
382005
Electron‐beam‐induced deposition of bimetallic nanostructures from bulk liquids
M Bresin, A Chamberlain, EU Donev, CB Samantaray, GS Schardien, ...
Angewandte Chemie 125 (31), 8162-8165, 2013
312013
First-principles study of electronic structure and optical properties of barium strontium titanates (BaxSr1− xTiO3)
CB Samantaray, H Sim, H Hwang
Applied surface science 250 (1-4), 146-151, 2005
252005
RF magnetron sputtered high-k barium strontium titanate thin films on magnetoresistive La0. 7Ca0. 3MnO3 electrode
CB Samantaray, A Dhar, ML Mukherjee, D Bhattacharya, SK Ray
Materials Science and Engineering: B 88 (1), 14-17, 2002
222002
Effect of post-deposition annealing on microstructural and optical properties of barium strontium titanate thin films deposited by rf magnetron sputtering
CB Samantaray, A Dhar, D Bhattacharya, ML Mukherjee, SK Ray
Journal of Materials Science: Materials in Electronics 12 (7), 365-370, 2001
222001
Nanopatterning of atomic layer deposited Al: ZnO films using electron beam lithography for waveguide applications in the NIR region
K Santiago, R Mundle, CB Samantaray, M Bahoura, AK Pradhan
Optical Materials Express 2 (12), 1743-1750, 2012
182012
Electrical properties of rf magnetron sputtered Ba x Sr 1− x TiO 3 films on multi-layered bottom electrodes for high-density memory application
B Panda, CB Samantaray, A Dhar, SK Ray, D Bhattacharya
Journal of Materials Science: Materials in Electronics 13 (5), 263-268, 2002
172002
Vibrational spectroscopic studies on Ba0. 8Sr0. 2TiO3 thin films prepared by RF sputtering technique
CB Samantaray, A Roy, M Roy, ML Mukherjee, SK Ray
Journal of Physics and Chemistry of Solids 63 (1), 65-69, 2002
172002
First-principles study of electronic structure and electron energy-loss-spectroscopy (EELS) of transition-metal aluminates as high-k gate dielectrics
CB Samantaray, H Sim, H Hwang
Applied surface science 242 (1-2), 121-128, 2005
142005
The effect of thin metal overlayers on the electron beam exposure of polymethyl methacrylate
CB Samantaray, JT Hastings
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
132008
Reduction of gate leakage current of HfSiON dielectrics through enhanced phonon-energy coupling
CB Samantaray, Z Chen
Applied physics letters 89 (16), 162903, 2006
112006
ZrO 2 as a high-K dielectric for strained SiGe MOS devices
R Mahapatra, GS Kar, CB Samantaray, A Dhar, D Bhattacharya, SK Ray
Bulletin of Materials Science 25 (6), 455-457, 2002
92002
Deep UV patterning of 3-amino-propyl-triethoxy-silane self-assembled molecular layers on alumina
CB Samantaray, JT Hastings
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
62011
Amino-propyl-triethoxy-silane on aluminum fiducial grids for spatial-phase-locked electron-beam lithography
CB Samantaray, JT Hastings
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
62009
Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si (111)
H Sim, CB Samantaray, T Lee, H Yeom, H Hwang
Japanese journal of applied physics 43 (12R), 7926, 2004
62004
Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO_2 as Charge-Trapping Layer and Al_2O_3 as Blocking Layer
S Choi, M Cho, CB Samantaray, S JEON, C KIM, H HWANG, S Maikap, ...
J. Appl. Phys 94, 5408, 2003
62003
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