Min-Woo Ha
Min-Woo Ha
Professor, Department of Electrical Engineering, Myongji University, South Korea
Verified email at - Homepage
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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
O Seok, W Ahn, MK Han, MW Ha
Semiconductor science and technology 28 (2), 025001, 2012
High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction
SC Lee, MW Ha, JC Her, SS Kim, JY Lim, KS Seo, MK Han
Proceedings. ISPSD'05. The 17th International Symposium on Power …, 2005
Suppression of leakage current of Ni/Au Schottky barrier diode fabricated on AlGaN/GaN heterostructure by oxidation
SC Lee, MW Ha, JY Lim, JC Her, KS Seo, MK Han
Japanese journal of applied physics 45 (4S), 3398, 2006
Effects of nitride-based plasma pretreatment prior to SiNx passivation in AlGaN/GaN high-electron-mobility transistors on silicon substrates
JH Kim, HG Choi, MW Ha, HJ Song, CH Roh, JH Lee, JH Park, CK Hahn
Japanese journal of applied physics 49 (4S), 04DF05, 2010
Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor
K Woo, W Kang, K Lee, P Lee, Y Kim, TS Yoon, CY Cho, KH Park, MW Ha, ...
Biosensors and Bioelectronics 159, 112186, 2020
Silicon dioxide passivation of AlGaN/GaN HEMTs for high breakdown voltage
MW Ha, SC Lee, JH Park, JC Her, KS Seo, MK Han
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage
SC Lee, JC Her, SS Kim, MW Ha, KS Seo, YI Choi, MK Han
2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004
A new junction termination method employing shallow trenches filled with oxide
JK Oh, MW Ha, MK Han, YI Choi
IEEE Electron Device Letters 25 (1), 16-18, 2004
Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition
J Huang, AT Lucero, L Cheng, HJ Hwang, MW Ha, J Kim
Applied Physics Letters 106 (12), 2015
Graphene-ferroelectric hybrid devices for multi-valued memory system
S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ...
Applied Physics Letters 103 (2), 2013
PCBM-blended chlorobenzene hybrid anti-solvent engineering for efficient planar perovskite solar cells
S Yoon, MW Ha, DW Kang
Journal of Materials Chemistry C 5 (39), 10143-10151, 2017
High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator
O Seok, W Ahn, MK Han, MW Ha
Electronics letters 49 (6), 425-427, 2013
High-voltage Schottky barrier diode on silicon substrate
MW Ha, CH Roh, DW Hwang, HG Choi, HJ Song, JH Lee, JH Park, ...
Japanese journal of applied physics 50 (6S), 06GF17, 2011
Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT
MW Ha, SC Lee, SS Kim, CM Yun, MK Han
Superlattices and Microstructures 40 (4-6), 562-566, 2006
SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate
MW Ha, YH Choi, J Lim, MK Han
Japanese journal of applied physics 46 (4S), 2291, 2007
Sensible design of open-porous spherical architectures for hybrid supercapacitors with improved high-rate capability
BG Lee, SI Shin, MW Ha
Current Applied Physics 20 (3), 419-424, 2020
AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
O Seok, MW Ha
Solid-State Electronics 105, 1-5, 2015
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
O Seok, MK Han, YC Byun, J Kim, HC Shin, MW Ha
Solid-State Electronics 103, 49-53, 2015
New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure
MW Ha, SC Lee, YH Choi, SS Kim, CM Yun, MK Han
Superlattices and Microstructures 40 (4-6), 567-573, 2006
An AlGaN/GaN HEMT power switch employing a field plate and a floating gate
SC Lee, MW Ha, JC Her, J Lim, KS Seo, MK Han
Physica Scripta 2006 (T126), 65, 2006
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