Sebastien Francoeur
Cited by
Cited by
Photooxidation and quantum confinement effects in exfoliated black phosphorus
A Favron, E Gaufrès, F Fossard, AL Phaneuf-L’Heureux, NYW Tang, ...
Nature materials 14 (8), 826-832, 2015
Molecular beam epitaxy growth of
S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ...
Applied physics letters 82 (14), 2245-2247, 2003
Band gap of
S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje
Applied physics letters 82 (22), 3874-3876, 2003
Giant spin-orbit bowing in GaAs 1− x Bi x
B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje
Physical review letters 97 (6), 067205, 2006
High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
Luminescence of as-grown and thermally annealed GaAsN/GaAs
S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
Excitons bound to nitrogen clusters in GaAsN
S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
Bi isoelectronic impurities in GaAs
S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas
Physical Review B 77 (8), 085209, 2008
Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x
S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ...
Applied Physics Letters 86 (11), 2005
Optical spectroscopy of single impurity centers in semiconductors
S Francoeur, JF Klem, A Mascarenhas
Physical review letters 93 (6), 067403, 2004
Polarization-resolved raman study of bulk-like and davydov-induced vibrational modes of exfoliated black phosphorus
AL Phaneuf-L’Heureux, A Favron, JF Germain, P Lavoie, P Desjardins, ...
Nano Letters 16 (12), 7761-7767, 2016
Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy
A Bergeron, J Ibrahim, R Leonelli, S Francoeur
Applied physics letters 110 (24), 2017
Mid-infrared polarized emission from black phosphorus light-emitting diodes
J Wang, A Rousseau, M Yang, T Low, S Francoeur, S Kéna-Cohen
Nano letters 20 (5), 3651-3655, 2020
Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2
P St-Jean, GA Seryogin, S Francoeur
Applied Physics Letters 96 (23), 2010
Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
A Favron, E Gaufres, F Fossard, PL Lévesque, AL Phaneuf-L'Heureux, ...
arXiv preprint arXiv:1408.0345, 2014
Phonon engineering in isotopically disordered silicon nanowires
S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M De La Mata, ...
Nano letters 15 (6), 3885-3893, 2015
Second-order Raman scattering in exfoliated black phosphorus
A Favron, FA Goudreault, V Gosselin, J Groulx, M Côté, R Leonelli, ...
Nano letters 18 (2), 1018-1027, 2018
Bi-induced vibrational modes in GaAsBi
MJ Seong, S Francoeur, S Yoon, A Mascarenhas, S Tixier, M Adamcyk, ...
Superlattices and Microstructures 37 (6), 394-400, 2005
Initiation and evolution of phase separation in heteroepitaxial InAlAs films
B Shin, A Lin, K Lappo, RS Goldman, MC Hanna, S Francoeur, ...
Applied physics letters 80 (18), 3292-3294, 2002
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Articles 1–20