Marc Meuris
Marc Meuris
imec / imomec
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On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4192008
Effective electrical passivation of Ge(100) for high- gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 082904, 2007
3292007
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
2942008
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 163904, 2013
2352013
Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium
A Satta, E Simoen, T Clarysse, T Janssens, A Benedetti, B De Jaeger, ...
Applied Physics Letters 87 (17), 172109, 2005
1692005
The IMEC clean: A new concept for particle and metal removal on Si surfaces
M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ...
Solid State Technology 38 (7), 109-113, 1995
1621995
Passivation of Ge (100)∕ GeO2∕ high-κ Gate Stacks Using Thermal Oxide Treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
1452007
Ion-implantation issues in the formation of shallow junctions in germanium
E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ...
Materials science in semiconductor processing 9 (4-5), 634-639, 2006
1452006
Evidence for two separate one-electron transfer events in excited fulleropyrrolidine dyads containing tetrathiafulvalene (TTF)
N Martin, L Sánchez, MA Herranz, DM Guldi
The Journal of Physical Chemistry A 104 (19), 4648-4657, 2000
1432000
High performance Ge pMOS devices using a Si-compatible process flow
P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
1372006
Capacitance-voltage characterization of interfaces
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 183504, 2008
1362008
P implantation doping of Ge: Diffusion, activation, and recrystallization
A Satta, T Janssens, T Clarysse, E Simoen, M Meuris, A Benedetti, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
1362006
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates
B De Jaeger, R Bonzom, F Leys, O Richard, J Van Steenbergen, ...
Microelectronic engineering 80, 26-29, 2005
1342005
Method and apparatus for removing a liquid from a surface of a rotating substrate
P Mertens, M Meuris, M Heyns
US Patent 6,491,764, 2002
1342002
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1332008
Deposition of on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
1332004
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied physics letters 91 (13), 133510, 2007
1302007
Ge dangling bonds at the interface and the viscoelastic properties of
M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’ Ev, ...
Applied Physics Letters 93 (16), 161909, 2008
1252008
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 064104, 2005
1242005
A study of the influence of typical wet chemical treatments on the germanium wafer surface
B Onsia, T Conard, S De Gendt, M Heyns, I Hoflijk, P Mertens, M Meuris, ...
Solid State Phenomena 103 (104), 27-30, 2005
1212005
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